Sputtering of Ti in Wordentec: Difference between revisions

Revision as of 08:58, 25 January 2018

The deposition rate will change with the settings for pressure and effect.

Pressure 1*10^-2 mbar, Effect 300 W

The rate is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge).

Revision as of 08:51, 7 April 2014 view source Knil (talk \| contribs) DCH-Employees-701 420 edits No edit summary ← Older edit		Revision as of 08:58, 25 January 2018 view source Rkch (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 271 edits →‎Deposition rate Newer edit →
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	'''Pressure 1*10<sup>-2</sup> mbar, Effect 300 W'''		'''Pressure 1*10<sup>-2</sup> mbar, Effect 300 W'''

	The rate is established to be 1.7 Å/s (in the ~~center~~ of the wafer, 1.3 Å/s at the edge).		The rate is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge).