Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
Bghe (talk | contribs)
Line 28: Line 28:
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silver|Silver]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silver|Silver]]


==Equipment performance and process related parameters Alcatel==
==Equipment performance and process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  

Revision as of 11:08, 26 October 2017

Feedback to this page: click here


Thermal evaporator- A system for deposition of metals

Positioned in cleanroom A-1.

The main purpose for the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate.

It is not only usable for Al deposition. The thermal evaporator has room for two boats and thereby the possibility to make thinfilms of two different metals. At the moment not that many metals have been test and made a recipe for. Right now is is only Al and Ag that can be used.


The user manual, APV, technical information and contact information can be found in LabManager:

Thermal Evaporator in LabManager


Process information

Materials for thermal evaporator evaporation

Equipment performance and process related parameters

Purpose Deposition of metals and silicon
  • Thermal evaporation of metals
Performance Film thickness
  • 10Å - 1µm* (for some materials)
Deposition rate
  • 0.5 Å/s - 5 Å/s (material dependens)
Process parameter range Process Temperature
  • Approximately room temperature
Process pressure
  • Low than 4*10-6 mbar
Substrates Batch size
  • Up to 8" wafer
  • Or several smaller pieces
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Metals

* For thicknesses above 200 nm permission is requested.