Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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== InP or GaAs substrate etching == | |||
When etching InP or GaAs substrates, both 2” wafers and small pieces, you should collect the chemicals used in a waste bottl. This does not apply for etching epilayers. | |||
There should be two bottles in the fumehood one for HCl used to etch InP substrates and one for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates. | |||
Once the bottles are full, you should bring them in Danchip basement and have a new one in CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid overpressure)''', while for InP waste we can use an empty and clean developer bottle. | |||
==HCl:H3PO4 etch== | ==HCl:H3PO4 etch== | ||