Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
|-
|-
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!Generel description
!Generel description
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|
*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*RF sputtering of TiO2 target
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* E-beam evaporation of TiO2
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
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*ALD (atomic layer deposition) of TiO<sub>2</sub>
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|-


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!Stoichiometry
!Stoichiometry
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*Can probably be varied (sputter target: Ti, O2 added during deposition)
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*unknown
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*unknown
Al<sub>2</sub>O<sub>3</sub>, very good
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*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
|-
|-


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!Film Thickness
!Film Thickness
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*~10nm - ~0.5µm(>2h)
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*~10nm - ~0.5µm(>2h)
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*~10nm - ~200 nm
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* 0nm - 100nm
* 0nm - 100nm
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!Deposition rate
!Deposition rate
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*3.0-3.5nm/min (reactive DC sputtering)
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*3 - 5 nm/min (RF sputtering)
*0.3 - 0.5nm/min
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* 1 - 2 Å/s
* (temperature dependent)
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* Not measured
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|-


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!Step coverage
!Step coverage
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*Not Known
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*Not Known
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*Not Known
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
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!Process Temperature
!Process Temperature
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*Expected to be below 100<sup>o</sup>C
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*Done at RT. There is a possibility to run at higher temperatures
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*Sample temperature can be set to 20-250 <sup>o</sup>C
*120<sup>o</sup>C - 150<sup>o</sup>C:
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*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub>
*300<sup>o</sup>C - 350<sup>o</sup>C: Anatase TiO<sub>2</sub> 
|-
|-


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!More info on TiO2
!More info on TiO2
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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*
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*
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
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!Substrate size
!Substrate size
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*1 50mm wafer
*1 100mm wafer
*1 150mm wafer
*1 200mm wafer
*Smaller pieces can be mounted with capton tape
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*several small samples
*several 50 mm wafers (Ø150mm carrier)
*1x 100 mm wafers
*1x 150 mm wafers
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*1x 2" wafer or
*several smaller samples
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*1-5 100 mm wafers
*1-5 100 mm wafers
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!'''Allowed materials'''
!'''Allowed materials'''
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*Almost any materials
*not Pb and very poisonous materials
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*Almost any materials
*Pb and poisonous materials only after special agreement
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|  
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Revision as of 10:21, 7 September 2015

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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al2O3 ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System or the Cryofox PVD co-sputter/evaporation. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

Comparison of the methods for deposition of Alumium Oxide

Sputter System Lesker Cryofox PVD co-sputter/evaporation ALD Picosun 200
Generel description
  • ALD (atomic layer deposition) of Al2O3
Stoichiometry

Al2O3, very good

Film Thickness
  • 0nm - 100nm
Deposition rate
  • (temperature dependent)
Step coverage
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature
  • 120oC - 150oC:
More info on TiO2
Substrate size
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • Several smaller samples
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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