Specific Process Knowledge/Thin film deposition/Wordentec

Feedback to this page: click here

Wordentec QCL 800

Wordendec: positioned in cleanroom D-2 in the Wordentec room

The Wordentec is a machine for:

• Deposition of metal through E-beam deposition
• Deposition of metal through thermal evaporation
• Deposition of materials through DC sputtering
• Cleaning of samples before deposition through Argon RF sputter clean

The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.

The user manual, quality control procedure and results, user APV, technical information and contact information can be found in LabManager:

Wordentec in LabManager

Process information

The metals available for E-beam evaporation and their standard deposition rates are:

Metal	Deposition rate [Å/s]
Titanium (Ti)	10
Chromium (Cr)	10
Aluminium (Al)	10
Nickel (Ni)	10
Platinum (Pt)	10
Gold (Au)	10

Thermal evaporation materials

We currently have Aluminium, Silver and Germanium available to deposit through thermal evaporation.

Sputter materials

It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently are:

• TiW alloy (10%/90% by weight)
• Aluminium (Al)
• Chromium (Cr)
• Silver (Ag)
• Titanium (Ti)
• Silicon (Si)

More information about deposition rates and surface roughness can be found by clicking on the different elements.

Wafer temperature

The wafer temperature during e-beam deposition of 200 nm Au on six wafers has been measured using thermal labels on the backside of the wafers. The following results were obtained:

Wafer	Temperature [C]
1	48
2	60
3	65
4	71
5	71
6	77

The temperatures are accurate within approximately +/- 3C and probably underestimating the actual wafer temperature slightly. It is observed that the wafer temperature increases with each wafer, thus if wafer temperature is of concern it is advised to reduce the number of wafers per run.

Equipment performance and and process related parameters Wordentec

Purpose	Deposition of metals	E-beam evaporation Sputtering Thermal evaporation
Performance	Film thickness	~10Å - 1µm*
	Deposition rate	~2.5Å/s - 15Å/s
Process parameter range	Process Temperature	Less than 80 oC
	Process pressure	~3x10-7 - 4x10-6 mbar
Substrates	Batch size	24x2" wafers or 6x4" wafers or 6x6" wafers Deposition on one side of the substrate
	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals

* For thicknesses above 200 nm permission is required.

Quality control (QC) for Wordentec

Quality control (QC) for Wordentec

QC procedure for Wordentec The newest QC data for Wordentec QC Recipe: Au Ni Deposition rate 10 Å/s 10 Å/s Thickness 1000 Å 1000 Å Pressure Below 2*10-6 mbar Below 2*10-6 mbar QC limits Wordentec Measured average thickness (Å) 900-1100 Å Lowest accepted deposition rate (Å/s) 6 Å/s Thicknesses are measured in 5 points with one of the Dektak instruments.