Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

Revision as of 13:17, 27 March 2014

Feedback to this page: click here

UV Exposure Comparison Table

Equipment		KS Aligner	Aligner-6inch	III-V Aligner	Inclined UV Lamp
Purpose		TS and BS Alignment UV exposure	TS and BS Alignment UV exposure	TS Alignment UV exposure	UV exposure
Performance	Minimum feature size	1.25µm down to 1.0µm	1.25µm	2µm
	Exposure light/filters/spectrum	350W Hg-lamp i-line filter (365nm notch filter), intensity in Constant Intensity mode: 7mW/cm² @ 365nm 303nm filter optional	350W Hg-lamp SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm² @ 365nm i-line filter optional	350W Hg-lamp the entire 350W Hg-lamp spectrum, intensity in Constant Power mode: 5mW/cm² @ 365nm	1000 W Hg(Xe) lamp near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
	Exposure mode	proximity, soft, hard, vacuum contact	proximity, soft, hard, vacuum contact	proximity, soft, hard, vacuum contact	Flood exposure Proximity exposure with home-made chuck and maskholder
Process parameter range	Positive Process	dose 42mW/cm2 for 1,5um AZ5214E resist dose 56mW/cm2 for 2,2um AZ5214E resist	dose 23mW/cm2 for 1,5um AZ5214E resist dose 35mW/cm2 for 2,2um AZ5214E resist		polymer dependant
Process parameter range	Negative Process	dose 21mW/cm2 for 1,5um AZ5214E resist dose 28mW/cm2 for 2,2um AZ5214E resist then 210mW/cm2 flood exposure after PEB	dose 16mW/cm2 for 1,5um AZ5214E resist dose 18mW/cm2 for 2,2um AZ5214E resist then 210mW/cm2 flood exposure after PEB		polymer dependant
Substrates	Batch size	1 small sample 1 50 mm wafers 1 100 mm wafers 1 150 mm wafers	1 50 mm wafers 1 100 mm wafers 25 150 mm wafers with automatic handling	1 small samples 1 50 mm wafers 1 100 mm wafers 1 150 mm wafers	all sizes up to 8inch
	Allowed materials	All cleanroom materials Dedicated 2inch chuck for III-V materials	All cleanroom materials except III-V materials	III-V compounds	All cleanroom materials

Mask for UV exposure

When you do UV exposure you need to have a mask. Here you can find information how to design and order your mask.

Tips and tricks for mask designing

Find a guide for L-edit and mask design here:

Unfortunately they are quite old, but may be useful anyway. Note some links/e-mails etc. are not correct anymore

Alignment marks

Following alignment marks are suggested to use on the EVG620 automatic aligner for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.

Alignment marks 2 .cif - You need the program "Clewin" to open this file
Alignment marks 2 .tdb - You need the program "L-Edit" to open this file

External links

Clewin download

Alignment marks location

KS Aligner MA6
Aligner 6inch EVG620

The mask's alignment marks for 4inch process:

BSA must be located between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and exactly at 45mm in left and right in horizontal location (x=+-45mm).

TSA must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.

The mask's alignment marks for 6inch process:

Both BSA and TSA must be located between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.

Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.

How to order a mask

Our standard mask supplier is Delta Mask. The smallest feature size obtainable from Delta Mask is 1.5 µm. If you need structures smaller than this please write it specificly in the e-mail. Be aware that this will increase the price by at least a factor of 3.

Send your *.cif file or *.gds file (for 7" mask or masks with CD under 1.5µm only *.gds should be used) in an e-mail along with a text file describing your specs (example spec file). E-mail address can be found in Danchip_contact_information. Cost according to Danchip price list.

KS Aligner

Feedback to this section: click here

SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Process information

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.

Positive tone resists:

AZ 5214E and AZ 4562

Compared to exposure on Aligner-6inch, the dose on KS-Aligner is doubled.

1.5µm: 35-49 mJ/cm² corresponding to 5-7 seconds exposure at 7 mW/cm².
2.2µm: 56-70 mJ/cm² corresponding to 8-10 seconds exposure at 7 mW/cm².
4.2µm: ~140 mJ/cm² corresponding to ~20 seconds exposure at 7 mW/cm².
10µm: ~280 mJ/cm² corresponding to ~40 seconds exposure at 7 mW/cm². Multiple exposure with 10s pauses is recommended.

AZ MiR 701 Preliminary results

Compared to exposure on Aligner-6inch, the dose on KS-Aligner is five-doubled.

1.5µm: 157.5 mJ/cm² corresponding to 22.5 seconds exposure at 7 mW/cm².

Negative tone resists

AZ 5214E image reversal

Compared to exposure on Aligner-6inch, the dose on KS-Aligner is doubled.

1.5µm: 21 mJ/cm² corresponding to 3 seconds exposure at 7 mW/cm².
2.2µm: 24 mJ/cm² corresponding to 3.4 seconds exposure at 7 mW/cm².

Flood exposure after reversal bake: 210 mJ/cm² corresponding to 30 seconds exposure at 7 mW/cm².

AZ nLOF 20XX Preliminary results

Compared to exposure on Aligner-6inch, the dose on KS-Aligner is the same.

1.5µm: 42 mJ/cm² corresponding to 6 seconds exposure at 7 mW/cm².
2µm: 49 mJ/cm² corresponding to 7 seconds exposure at 7 mW/cm².
3µm: 56 mJ/cm² corresponding to 8 seconds exposure at 7 mW/cm².
4.3µm: 70 mJ/cm² corresponding to 10 seconds exposure at 7 mW/cm².

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	soft contact, hard contact, proximity, flood exposure
	Exposure light/filters	365 nm (i-line), light intensity 7,0 mW/cm² in Constant Intansity (CI2) mode 303 nm filters optional
	Minimum structure size	down to 1µm
	Mask size	5x5inch 7x7inch
	Alignment modes	Top Side Alignment(TSA) Bottom Side Alignment(BSA)
Substrates	Substrate size	50 mm wafers 110 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materals III-V materials chuck optinal
	Batch	1

Aligner-6inch

Feedback to this section: click here

Aligner-6inch, EVG620 aligner, is designed for high resolution photolithography. The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates. The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. Available exposure mode: proximity, soft, hard and vacuum contact. Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Process information

The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.

Positive tone resists:

AZ 5214E and AZ 4562

Compared to exposure on KS-Aligner, the dose on Aligner-6inch is halved.

1.5µm: 24.5 mJ/cm² corresponding to 3.5 seconds exposure at 7 mW/cm².
10µm: ~140 mJ/cm² corresponding to ~20 seconds exposure at 7 mW/cm². Multiple exposure with 10s pauses is recommended.

AZ MiR 701 Preliminary results

Compared to exposure on KS-Aligner, the dose on Aligner-6inch is one fifth.

1.5µm: 31.5 mJ/cm² corresponding to 4.5 seconds exposure at 7 mW/cm².

Negative tone resists

AZ 5214E image reversal

Compared to exposure on KS-Aligner, the dose on Aligner-6inch is halved.

1.5µm: 10.5 mJ/cm² corresponding to 1.5 seconds exposure at 7 mW/cm².
2.2µm: 12 mJ/cm² corresponding to 1.7 seconds exposure at 7 mW/cm².

Flood exposure after reversal bake: 105 mJ/cm² corresponding to 15 seconds exposure at 7 mW/cm².

AZ nLOF 20XX Preliminary results

Compared to exposure on KS-Aligner, the dose on Aligner-6inch is the same.

1.5µm: 42 mJ/cm² corresponding to 6 seconds exposure at 7 mW/cm².
2µm: 49 mJ/cm² corresponding to 7 seconds exposure at 7 mW/cm².
3µm: 56 mJ/cm² corresponding to 8 seconds exposure at 7 mW/cm².
4.3µm: 70 mJ/cm² corresponding to 10 seconds exposure at 7 mW/cm².

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	soft contact, hard contact, proximity, flood exposure automatic loading optional for 6inch substrates automatic pattern recognition optional for special alignment marks
	Exposure light/filters	SU8 filter (long-pass), light intensity 7mW/cm2 in Constant Power (CP) mode 365 nm filter optional
	Minimum structure size	down to 1um exposure with 4inch chuck down to 5um exposure with 6inch chuck
	Mask size	5x5inch 7x7inch
	Alignment modes	Top Side Alignment(TSA) Bottom Side Alignment(BSA)
Substrates	Substrate size	50 mm wafers 110 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except III-V materials
	Batch	1 for 4inch substrates 25 for 6inch substrates in automatic loading mode

III-V Aligner

Feedback to this section: click here

The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.

Specific use of the mask aligner can be found in the standard resist recipes.

The user manual and contact information can be found in LabManager: Equipment info in LabManager

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	soft contact, hard contact, proximity, flood exposure
	Exposure light/filters	365 nm, 405 nm
	Minimum structure size	down to 2µm
	Mask size	5x5inch
	Alignment modes	Top side only
Substrates	Substrate size	50 mm wafers small pieces 1x1cm
	Allowed materials	III-V materials
	Batch	1

Inclined UV Lamp

Feedback to this section: click here

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.

The technical specification and the general outline of the equipment can be found in LabManager.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Equipment performance and process related parameters

Purpose		UV exposure
Performance	Exposure mode	Flood exposure Proximity exposure with mask possible for 4inch substrate
	Exposure light/filters	Near UV(350-450nm) Mid UV (260-320nm) Deep UV(220-260nm)
	Minimum structure size
	Mask size	5x5inch optinal
	Alignment modes	No alignment possible
Substrates	Substrate size	Up to 8inch substrates, different shapes
	Allowed materials	All cleanroom materials
	Batch	1

@@ Line 457: / Line 457: @@
 '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Inclined_UV_lamp click here]'''
-[[Image:Inclined UV lamp_1.jpg|300×300px|right|thumb|Inclined UV lamp is placed in E-5]]
+[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in E-5]]
 The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.