Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

Revision as of 15:04, 14 September 2011

Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	E-beam evaporation (Wordentec)	E-beam evaporation (PVD co-sputter/evaporation)	Sputter deposition (Wordentec)
Batch size	Up to 1x4" wafers smaller pieces	24x2" wafers or 6x4" wafers or 6x6" wafers	4x6" wafers or 4x4" wafers or 2x6" wafers	24x2" wafers or 6x4" wafers or 6x6" wafers
Pre-clean	RF Ar clean	RF Ar clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm	10Å to 1 µm	10Å to 1000Å	.
Deposition rate	2Å/s to 15Å/s	10Å/s to 15Å/s	About 1Å/s	Depending on process parameters, see here.

@@ Line 6: / Line 6: @@
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
 ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 |-
@@ Line 16: / Line 17: @@
 *6x4" wafers or
 *6x6" wafers
+|
+*4x6" wafers or
+*4x4" wafers or
+*2x6" wafers
 |
 *24x2" wafers or
@@ Line 22: / Line 27: @@
 |-
 | Pre-clean
+|RF Ar clean
 |RF Ar clean
 |RF Ar clean
@@ Line 29: / Line 35: @@
 |10Å to 1µm
 |10Å to 1 µm
+|10Å to 1000Å
 |.
 |-
@@ Line 34: / Line 41: @@
 |2Å/s to 15Å/s
 |10Å/s to 15Å/s
+|About 1Å/s
 |Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
 |-