Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch: Difference between revisions
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|<!--'''Process time'''--> 11:00 min | |<!--'''Process time'''--> 11:00 min | ||
|<!--'''Date'''--> 11/09/2023 | |<!--'''Date'''--> 11/09/2023 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:CF4ICP_11min_C_01.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> | |<!--'''SEM pic w/ no resist'''--> | ||
|<!--'''Redeposition - top view'''--> [[File: | |<!--'''Redeposition - top view'''--> [[File:800px-CF4ICP_11min_af_PA_top_01.png|200px]] | ||
|<!--'''Profile angles'''--> [[File: | |<!--'''Profile angles'''--> [[File:800px-CF4ICP_11min_C_03.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 68 nm/min <br> +/- 8.5% | |<!--'''Etch rate in SiO2'''--> 68 nm/min <br> +/- 8.5% | ||
|<!--'''Etch rate in resist'''--> 60,2 nm/min <br> +/- 9% | |<!--'''Etch rate in resist'''--> 60,2 nm/min <br> +/- 9% |
Revision as of 13:54, 3 October 2023
More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch
Tests performed by Maria Farinha @DTU Nanolab
Recipes and results - CF4 / H2 tests
Recipe | Recipe parameters | Process time | Date | SEM picture | SEM pic w/ no resist | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
Etch rate in Si |
---|---|---|---|---|---|---|---|---|---|---|---|
CF4ICP 22.5/22.5 | CF4= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
11:00 min | 11/09/2023 | ![]() |
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68 nm/min +/- 8.5% |
60,2 nm/min +/- 9% |
1.13 | ||
CF4ICP 35/10 | CF4= 35 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
08:00 min | March 2023 | File:35.10 af ase 04.png | File:35.10 af PA bot 03.png | 69 nm/min +/- 11.1% |
77,1 nm/min +/- 9.4% |
0.9 | |||
CF4ICP 45/0 | CF4= 45 sccm H2= 0 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
08:00 min | March 2023 | File:CF4ICP 45.0c bf PA 04.png | File:CF4ICP 45.0c af Pa-bot 06.png | 71.4 nm/min +/- 10.3% |
96,5 nm/min +/- 6.0% |
0.74 | |||
CF4ICP 45/10 | CF4= 45 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
08:00 min | March 2023 | File:45.10 af ASE 01.png | File:45.10 af PA center 07.png | 67.8 nm/min +/- 14.9% |
88,86 nm/min +/- 4.8% |
0.76 | |||
CF4lowCP 22.5/22.5 | CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
20:00 min | Sept 2023 | ![]() |
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23.8 nm/min +/- 11% |
20,6 nm/min +/- 19.4% |
1.16 | |||
CF4lowCP 35/10 | CF4= 35 sccm H2= 10 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | Feb 2023 | ![]() |
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22.65 nm/min +/- 10.2% |
35.9 nm/min +/- 10.1% |
0.63 | |||
CF4lowCP 45/0 | CF4= 45 sccm H2= 0 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | Feb 2023 | ![]() |
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24.9 nm/min +/- 10.1% |
52,3 nm/min +/- 7.1% |
0.47 | |||
CF4lowCP 45/10 | CF4= 45 sccm H2= 10 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 min | Feb 2023 | ![]() |
X | 29,4 nm/min +/- 13.7% |
100,6 nm/min +/- 16.5% |
0.29 |
Recipes and results - CHF3 tests