Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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*Forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) - Not connected yet | *Forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) - Not connected yet | ||
Purge gas: | Purge gas: | ||
*Nitrogen (N<sub>2</sub> | *Nitrogen (N<sub>2</sub>) | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
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*One 100 mm wafer | *One 100 mm wafer | ||
*One or more 50 mm wafers (always placed on a susceptor or dummy wafer) | *One or more 50 mm wafers (always placed on a susceptor or dummy wafer) | ||
*One or more small samples(always placed on a susceptor or dummy wafer) | *One or more small samples (always placed on a susceptor or dummy wafer) | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Substrate materials allowed | |style="background:LightGrey; color:black"|Substrate materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon | *Silicon | ||
*Silicon oxide and silicon nitride | *Silicon oxide and silicon nitride | ||