Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

Revision as of 12:30, 15 August 2011

Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	E-beam evaporation (Wordentec)	Sputter deposition (Wordentec)
Batch size	Up to 1x4" wafers smaller pieces	24x2" wafers or 6x4" wafers or 6x6" wafers	24x2" wafers or 6x4" wafers or 6x6" wafers
Pre-clean	RF Ar clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm	10Å to 1 µm	.
Deposition rate	2Å/s to 15Å/s	10Å/s to 15Å/s	Depending on process parameters, see here.

@@ Line 5: / Line 5: @@
 !
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Leybold|Leybold]])
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
@@ Line 13: / Line 12: @@
 *Up to 1x4" wafers
 *smaller pieces
-|
-*8x4" wafers or
-*5x6" wafers
 |
 *24x2" wafers or
@@ Line 27: / Line 23: @@
 | Pre-clean
 |RF Ar clean
-|Ar ion bombartment
 |RF Ar clean
 |RF Ar clean
@@ Line 33: / Line 28: @@
 | Layer thickness
 |10Å to 1µm
-|10Å to 0.5µm
 |10Å to 1 µm
 |.
@@ Line 39: / Line 33: @@
 | Deposition rate
 |2Å/s to 15Å/s
-|1Å/s to 5Å/s
 |10Å/s to 15Å/s
 |Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].