Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

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|1Å/s to 5Å/s
|1Å/s to 5Å/s
|10Å/s to 15Å/s
|10Å/s to 15Å/s
|.
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Dependent on process parameters
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Revision as of 11:54, 8 September 2009

Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Leybold) E-beam evaporation (Wordentec) Sputter deposition (Wordentec)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 8x4" wafers or
  • 5x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Pre-clean RF Ar clean Ar ion bombartment RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm 10Å to 0.5µm 10Å to 1 µm .
Deposition rate 2Å/s to 15Å/s 1Å/s to 5Å/s 10Å/s to 15Å/s Depending on process parameters, see here.


Comments: Choise of equipment

Thick layers

Comments: Adhesion layer

Ti as adhesion layer