Sputtering of Ti in Wordentec: Difference between revisions

Revision as of 17:12, 11 September 2022

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The deposition rate will change with the settings for pressure and power.

Pressure: 1*10^-2 mbar, Power: 300 W

The rate in the Wordentec is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018).

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	'''Pressure 1*10<sup>-2</sup> mbar, Power 300 W'''		'''Pressure: 1*10<sup>-2</sup> mbar, Power: 300 W'''

	The rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]] is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018).		The rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]] is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018).