Specific Process Knowledge/Thermal Process: Difference between revisions
No edit summary |
|||
| Line 7: | Line 7: | ||
*[[/Dope with Boron|Doping with Boron]] | *[[/Dope with Boron|Doping with Boron]] | ||
*[[/Dope with Phosphorus|Doping with Phosphorus]] | *[[/Dope with Phosphorus|Doping with Phosphorus]] | ||
== Choose an equipment to use == | == Choose an equipment to use == | ||
'''A stack furnaces:''' | |||
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards'' | *[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards'' | ||
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers'' | *[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers'' | ||
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | *[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | ||
'''C stack furnaces:''' | |||
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | *[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | ||
*[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | ||
'''Other furnaces:''' | |||
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | *[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | ||
*[[/Furnace: Multipurpose annealing |Furnace: Multipurpose annealing ]] - ''For annealing, oxidation and resist pyrolysis'' | *[[/Furnace: Multipurpose annealing |Furnace: Multipurpose annealing ]] - ''For annealing, oxidation and resist pyrolysis'' | ||
*[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | *[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | ||
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | *[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | ||
== Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | |||
*[[/Storage and cleaning of wafer to the A, B, C and E stack furnaces|Storage and cleaning of wafer to the A and C stack furnaces]] | |||
== Decommissioned equipment == | == Decommissioned equipment == | ||