Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions
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[[Image:IMG_2592_edit.jpg|300x300px|thumb| Positioned in cleanroom A-1.]] | [[Image:IMG_2592_edit.jpg|300x300px|thumb| Positioned in cleanroom A-1.]] | ||
The main purpose for the thermal evaporator is to deposit Al for removing charging of the | The main purpose for the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate. | ||
It is no only usable for Al deposition. The thermal evaporator have room for two boats and there by the possibility to make thinfilms of two different metals. At the moment not that many metals have been test and made a recipe for. Right now is is only Al and Ag that can be used. | It is no only usable for Al deposition. The thermal evaporator have room for two boats and there by the possibility to make thinfilms of two different metals. At the moment not that many metals have been test and made a recipe for. Right now is is only Al and Ag that can be used. |
Revision as of 11:03, 26 October 2017
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Thermal evaporator- A system for deposition of metals
The main purpose for the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate.
It is no only usable for Al deposition. The thermal evaporator have room for two boats and there by the possibility to make thinfilms of two different metals. At the moment not that many metals have been test and made a recipe for. Right now is is only Al and Ag that can be used.
The user manual, APV, technical information and contact information can be found in LabManager:
Thermal Evaporator in LabManager
Process information
Materials for thermal evaporator evaporation
Purpose | Deposition of metals and silicon |
|
---|---|---|
Performance | Film thickness |
|
Deposition rate |
| |
Process parameter range | Process Temperature |
|
Process pressure |
| |
Substrates | Batch size |
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Substrate material allowed |
| |
Material allowed on the substrate |
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* For thicknesses above 200 nm permission is requested.