Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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== | ==Overview of the performance of Anneal Bond furnace and some process related parameters== | ||
{| border="2" cellspacing="0" cellpadding="10" | {| border="2" cellspacing="0" cellpadding="10" | ||
|- | |- | ||
!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Oxidation and annealing | |style="background:LightGrey; color:black"|Oxidation and annealing | ||
|style="background:WhiteSmoke; color:black"|Oxidation: | |||
*Dry | *Dry | ||
*Wet: with bubbler (water steam + N<math>_2</math>) | *Wet: with bubbler (water steam + N<math>_2</math>) | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |||
*Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker) | *Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker) | ||
*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker) | *Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker) | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*800-1150 <sup>o</sup>C | *800-1150 <sup>o</sup>C | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 atm | *1 atm | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<math>_2</math>:? sccm | *N<math>_2</math>:? sccm | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1-30 4" wafer (or 2" wafers) per run | *1-30 4" wafer (or 2" wafers) per run | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (new from the box or RCA cleaned) | *Silicon wafers (new from the box or RCA cleaned) | ||