Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

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-==Deposition of Titanium Oxide==
+==Deposition of aluminium oxide==
-Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). At the moment the only system where we have a target for Titanium oxide is [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
+Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]].  During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
-*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
+*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]
-*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
+*[[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al2O3 deposition using ALD]]
 ==Comparison of the methods for deposition of Titanium Oxide==