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Deposition of aluminium oxide

Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

Comparison of the methods for deposition of Titanium Oxide

	Sputter technique using IBE/IBSD Ionfab300	Sputter System Lesker	III-V Dielectric evaporator	ALD Picosun 200
Generel description	TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.	Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma. RF sputtering of TiO2 target	E-beam evaporation of TiO2	ALD (atomic layer deposition) of TiO₂
Stoichiometry	Can probably be varied (sputter target: Ti, O2 added during deposition)	unknown	unknown	Temperature dependent - Anatase or amorphous TiO₂
Film Thickness	~10nm - ~0.5µm(>2h)	~10nm - ~0.5µm(>2h)	~10nm - ~200 nm	0nm - 100nm
Deposition rate	3.0-3.5nm/min (reactive DC sputtering)	3 - 5 nm/min (RF sputtering) 0.3 - 0.5nm/min	1 - 2 Å/s	Not measured
Step coverage	Not Known	Not Known	Not Known	Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature	Expected to be below 100^oC	Done at RT. There is a possibility to run at higher temperatures	Sample temperature can be set to 20-250 ^oC	120^oC - 150^oC: Amorphous TiO₂ 300^oC - 350^oC: Anatase TiO₂
More info on TiO2	TiO2 made on IBE/IBSD Ionfab300			TiO2 deposition using ALD TiO2 deposition on trenches using ALD
Substrate size	1 50mm wafer 1 100mm wafer 1 150mm wafer 1 200mm wafer Smaller pieces can be mounted with capton tape	several small samples several 50 mm wafers (Ø150mm carrier) 1x 100 mm wafers 1x 150 mm wafers	1x 2" wafer or several smaller samples	1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
Allowed materials	Almost any materials not Pb and very poisonous materials	Almost any materials Pb and poisonous materials only after special agreement		Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al₂O₃ Ti, TiO₂ Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)

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-==Deposition of Titanium Oxide==
+==Deposition of aluminium oxide==
-Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). At the moment the only system where we have a target for Titanium oxide is [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
+Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]].  During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
-*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
+*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]
-*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
+*[[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al2O3 deposition using ALD]]
 ==Comparison of the methods for deposition of Titanium Oxide==