Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | |||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | ||
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|E-beam deposition of Titanium | |E-beam deposition of Titanium | ||
|E-beam deposition of Titanium | |E-beam deposition of Titanium | ||
|Sputter deposition of Titanium | |||
|Sputter deposition of Titanium | |Sputter deposition of Titanium | ||
|E-beam deposition of Titanium | |E-beam deposition of Titanium | ||
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|RF Ar clean | |RF Ar clean | ||
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|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
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|10Å to 2000Å | |10Å to 2000Å | ||
|10Å to 1000Å | |10Å to 1000Å | ||
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|. | |. | ||
|10Å to 1000Å | |10Å to 1000Å | ||
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|About 10Å/s | |About 10Å/s | ||
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]]. | |Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]]. | ||
|Depending on process parameters, about 1 Å/s. | |||
|About 1Å/s | |About 1Å/s | ||
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*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
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* Smaller pieces | |||
* Up to 1x6" wafers | |||
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* 2" wafer or | * 2" wafer or | ||
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* III-V materials | * III-V materials | ||
* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
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* Silicon wafers | * Silicon wafers | ||
* Quartz wafers | * Quartz wafers | ||
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* PMMA | * PMMA | ||
* Mylar | * Mylar | ||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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* Silicon oxide | * Silicon oxide | ||
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|Only very thin layers (up to 100nm). | |Only very thin layers (up to 100nm). | ||
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Revision as of 10:23, 20 October 2014
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Titanium deposition
Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | E-beam evaporation (Physimeca) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | E-beam evaporation (III-V Dielectric evaporator) | |
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| General description | E-beam deposition of Titanium | E-beam deposition of Titanium | E-beam deposition of Titanium | E-beam deposition of Titanium | Sputter deposition of Titanium | Sputter deposition of Titanium | E-beam deposition of Titanium |
| Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | ||
| Layer thickness | 10Å to 1µm* | 10Å to 1 µm* | 10Å to 2000Å | 10Å to 1000Å | . | . | 10Å to 1000Å |
| Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | About 10Å/s | Depending on process parameters, see here. | Depending on process parameters, about 1 Å/s. | About 1Å/s |
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| Comment | Only very thin layers (up to 100nm). |
* For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.