Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions
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Revision as of 10:39, 20 October 2014
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Titanium deposition
Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | E-beam evaporation (Physimeca) | Sputter deposition (Wordentec) | E-beam evaporation (III-V Dielectric evaporator) | |
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| General description | E-beam deposition of Titanium | E-beam deposition of Titanium | E-beam deposition of Titanium | E-beam deposition of Titanium | Sputter deposition of Titanium | E-beam deposition of Titanium |
| Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | ||
| Layer thickness | 10Å to 1µm* | 10Å to 1 µm* | 10Å to 2000Å | 10Å to 1000Å | . | 10Å to 1000Å |
| Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | About 10Å/s | Depending on process parameters, see here. | About 1Å/s |
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| Comment | Only very thin layers (up to 100nm). |
* For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.