Jump to content

Specific Process Knowledge/Doping: Difference between revisions

Kabi (talk | contribs)
Kabi (talk | contribs)
Line 10: Line 10:
This page is about doping your wafer or making a thin film layer doped with boron, phosphorous or Germanium.
This page is about doping your wafer or making a thin film layer doped with boron, phosphorous or Germanium.


*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorous|Dope with Phosphorus]] - Doping Silicon wafers with phosphorous by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorous]] - Doping Silicon wafers with phosphorous by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P