Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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Ikke skevet!
==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS==
==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS==
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]]
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]]

Revision as of 13:23, 28 January 2008

Ikke skevet!

LPCVD (Low Pressure Chemical Vapor Deposition) TEOS

B3 Furnace LPCVD TEOS: positioned in cleanroom 2

At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One for depositing ? and one for deposition of ?. To get information on how to operate the furnace please read the manual which is uploaded to LabManager.

Process Knowledge

Please take a look at the process side for deposition of ?: Deposition of Silicon Nitride using LPCVD


A rough overview of the performance of LPCVD Silicon Nitride and some process related parameters

Purpose Deposition of TEOS silicon oxide .
Performance Film thickness
  • Si3N4:~50Å - ~3000Å
  • SRN: ~50Å - ~10000Å
. Step coverage
  • Good
. Film quality
  • Dense film
  • Few defects
Process parameter range Process Temperature
  • 800-835 oC
. Process pressure
  • 80-230 mTorr
. Gas flows
  • SiHCl:10-100 sccm
  • NH:10-75 sccm
Substrates Batch size
  • 1-25 4" wafer per run
  • Deposition on both sides of the substrate
. Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
    • with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Quartz wafers (RCA cleaned)