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Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

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|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
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* Silicon wafers
* Quartz wafers
* Pyrex wafers
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* Quartz wafers
* Pyrex wafers
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* Quartz wafers
* Pyrex wafers
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* Quartz wafers
* Pyrex wafers
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Revision as of 17:00, 6 March 2014

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Titanium deposition

Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) Sputter deposition (Wordentec)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Pre-clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm 10Å to 1 µm 10Å to 1000Å .
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s Depending on process parameters, see here.
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment Only very thin layers (up to 100nm).

Comments: Choise of equipment

Thick layers

Comments: Adhesion layer

Ti as adhesion layer

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