Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions
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==Titanium deposition == | |||
Titanium can be deposited at DTU Nanolab by e-beam evaporation or sputtering. | |||
*[[/Ti deposition in Sputter System (Lesker)|Ti deposition in Sputter System (Lesker)]] | |||
== Ti as an adhesion layer == | |||
Titanium is most often used as a adhesion layer for other metals, such as gold. Gold does not stick very well to Si, and to prevent it to come off in future process steps or in the final application, a layer of Ti (or Cr or an organic layer) is often deposited onto the wafer. | |||
The most common thickness of the Ti adhesion layer is '''10 nm'''. Also layers with a thickness of 5 nm is used. Read more about [[Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers|gold adhesion layers]]. | |||
===Very thin adhesion layers=== | |||
If it is important to have a very thin Ti layer, it is possible to use even thinner adhesion layers. There is some experience in using a 3 nm Ti as adhesion layer for a 200 nm thick gold layer. In this case a Si wafer was dipped in buffer and rinsed in water immediately before being placed in the PVD equipment (Wordentec). After an RF clean process of the wafer, 3nm of Ti and 200 nm of Au was deposited, and this worked fine during futher processing. | |||
==Comparison of methods of Ti deposition== | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |||
! | ! | ||
! E-beam evaporation ( | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | |||
! E-beam evaporation (Wordentec) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | |||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
| | |||
|-style="background:WhiteSmoke; color:black" | |||
! General description | |||
|E-beam deposition of Titanium (line-of-sight deposition) | |||
|E-beam deposition of Titanium (line-of-sight deposition) | |||
|Sputter deposition of Titanium (some step coverage) | |||
|Sputter deposition of Titanium (some step coverage) | |||
|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage) | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
! Pre-clean | |||
|Ar ion etch (only in E-beam evaporator Temescal) | |||
| | |||
| | | | ||
*Up to | |RF Ar clean | ||
|RF Ar clean | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! Layer thickness | |||
|10Å to 1 µm* | |||
|10Å to 1 µm* | |||
|. | |||
|. | |||
|. | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
! Deposition rate | |||
|1 Å/s to 10Å/s | |||
|few Å/s to 15Å/s | |||
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]]. | |||
|Depending on process parameters, about 1 Å/s. | |||
|Depending on process parameters | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! Batch size | |||
| | |||
*Up to 4x6" wafers | |||
*Up to 3x8" wafers (ask for holder) | |||
*smaller pieces | *smaller pieces | ||
| | | | ||
* | *24x2" wafers or | ||
* | *6x4" wafers or | ||
*6x6" wafers | |||
| | | | ||
*24x2" wafers or | *24x2" wafers or | ||
*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
| | |||
* Smaller pieces | |||
* Up to 1x6" wafers | |||
| | |||
*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
|-style="background:LightGrey; color:black" | |||
! Allowed substrates | |||
| | |||
*Almost any as long as they do not degas. See cross-contamination sheet. | |||
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*Almost any as long as they do not degas. See cross-contamination sheet. | |||
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*Almost any as long as they do not degas. See cross-contamination sheet. | |||
| | |||
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet. | |||
| | |||
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet. | |||
|- | |- | ||
| | |-style="background:WhiteSmoke; color:black" | ||
| | !Allowed materials | ||
| | | | ||
| | *Almost any as noted above | ||
| | | | ||
| | *Almost any as noted above | ||
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*Almost any as noted above | |||
| | | | ||
| | *Almost any as noted above | ||
| | | | ||
| | *Almost any as noted above | ||
|-style="background:LightGrey; color:black" | |||
| | ! Comment | ||
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|- | |- | ||
|} | |} | ||
'''*''' ''For thicknesses above 600 nm please write to metal@nanolab.dtu.dk to ensure that there is enough material available.'' |
Latest revision as of 15:11, 22 January 2024
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Titanium deposition
Titanium can be deposited at DTU Nanolab by e-beam evaporation or sputtering.
Ti as an adhesion layer
Titanium is most often used as a adhesion layer for other metals, such as gold. Gold does not stick very well to Si, and to prevent it to come off in future process steps or in the final application, a layer of Ti (or Cr or an organic layer) is often deposited onto the wafer.
The most common thickness of the Ti adhesion layer is 10 nm. Also layers with a thickness of 5 nm is used. Read more about gold adhesion layers.
Very thin adhesion layers
If it is important to have a very thin Ti layer, it is possible to use even thinner adhesion layers. There is some experience in using a 3 nm Ti as adhesion layer for a 200 nm thick gold layer. In this case a Si wafer was dipped in buffer and rinsed in water immediately before being placed in the PVD equipment (Wordentec). After an RF clean process of the wafer, 3nm of Ti and 200 nm of Au was deposited, and this worked fine during futher processing.
Comparison of methods of Ti deposition
E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | E-beam evaporation (Wordentec) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
---|---|---|---|---|---|
General description | E-beam deposition of Titanium (line-of-sight deposition) | E-beam deposition of Titanium (line-of-sight deposition) | Sputter deposition of Titanium (some step coverage) | Sputter deposition of Titanium (some step coverage) | Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage) |
Pre-clean | Ar ion etch (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean | ||
Layer thickness | 10Å to 1 µm* | 10Å to 1 µm* | . | . | . |
Deposition rate | 1 Å/s to 10Å/s | few Å/s to 15Å/s | Depending on process parameters, see here. | Depending on process parameters, about 1 Å/s. | Depending on process parameters |
Batch size |
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Allowed substrates |
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Allowed materials |
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Comment |
* For thicknesses above 600 nm please write to metal@nanolab.dtu.dk to ensure that there is enough material available.