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Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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!Generel description
!Generel description
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*Evaporation of Ti pellets in the presence of a O<sub>2</sub> flow.
*Evaporation of Ti or Ti<sub>2</sub>O<sub>3</sub> pellets in the presence of O<sub>2</sub>.
*Can heat up to 250 °C.
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*Reactive DC sputtering of Ti target  
*Reactive DC sputtering of Ti target  
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*Reactive pulsed DC sputtering
*Reactive pulsed DC sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
*Reactive HIPIMS (high-power impulse magnetron sputtering)
*Can heat up to 6000 °C
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*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma
*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma
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*ALD (atomic layer deposition) of TiO<sub>2</sub>
*ALD (atomic layer deposition) of TiO<sub>2</sub>
*Can heat up to 350 °C
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Stoichiometry
!Stoichiometry and form
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*Can probably be varied, expect somewhat O-poor composition
*Can probably be varied, expect somewhat O-poor composition
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!Deposition rate
!Deposition rate
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*1-10 Å/s Ti deposition rate (TiO<sub>2</sub> should be faster)
*1-10 Å/s Ti deposition rate (oxidized layer growth should be faster; actual growth rate will need testing)
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*not yet known, probably faster than Sputter-System(Lesker)
*not yet known, probably faster than Sputter-System(Lesker)
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!More info on TiO2
!More info on TiO2
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*Expected to be lower density than bulk material of same stoichiometry.
*Expect lower density than bulk material of same stoichiometry.
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*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]
*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]
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