Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

From LabAdviser
Reet (talk | contribs)
Reet (talk | contribs)
 
(8 intermediate revisions by 2 users not shown)
Line 1: Line 1:


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


<br clear="all" />
<br clear="all" />
Line 15: Line 17:


*[[/Al sputtering in Sputter System (Lesker) |Al sputtering in Sputter System (Lesker)]]
*[[/Al sputtering in Sputter System (Lesker) |Al sputtering in Sputter System (Lesker)]]
*[[/Al_Sputtering_in_Cluster_Lesker_PC3 |Al Sputtering in Sputter-System Metal-Nitride(PC3)]]


==E-beam evaporation of Aluminium==
==E-beam evaporation of Aluminium==


Aluminium can be deposited by e-beam assisted evaporation in the Wordentec, Physimeca and Temescal tools.
Aluminium can be deposited by e-beam assisted evaporation in the Wordentec and the two Temescal tools.
 


*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
Line 47: Line 50:


!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
Line 75: Line 78:
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion etch
|Ar ion etch (only in E-beam evaporator Temescal)
|  
|  
|
|
|RF Ar clean  
|RF Ar clean  
|RF Ar clean
|
|
|RF Ar clean
|
|
|-
|-
Line 95: Line 98:
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 15Å/s
|/s to 10Å/s
|10Å/s to 15Å/s
|/s to 15Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
Line 129: Line 132:
*6x6" wafers
*6x6" wafers
|
|
*Up to one 8" wafer (limited uniformity on large substrates)
*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
*Many small chips


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
Line 145: Line 149:
Approx. 5 min plus 6 min transfer time
Approx. 5 min plus 6 min transfer time
|
|
Approx. 1,5 hour
Approx. 1.5 hour
|
|
Approx. 15 min
Approx. 15 min


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Allowed substrates
! Allowed materials


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
 


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
|
* Silicon wafers  
* Silicon wafers  
* and almost any
* and almost any
|
|
* Silicon wafers
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* And almost any that does not degas. Special carrier for III-V materials.
* Special carrier for III-V materials.
|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Allowed materials
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
*Almost any - see [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross contamination sheet]
|
*Almost any - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|'''*''' Thickness above 600 nm: ask for permission
|'''*''' Thickness above 600 nm: ask for permission

Latest revision as of 14:42, 19 January 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of Aluminium

Aluminium can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


Sputtering of Aluminium

Aluminium may be sputter deposited in either the Wordentec, the sputter-system (Lesker), or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in the matrix below.

E-beam evaporation of Aluminium

Aluminium can be deposited by e-beam assisted evaporation in the Wordentec and the two Temescal tools.


Thermal deposition of Aluminium

In the Wordentec and the Thermal evaporator aluminium can be deposited by thermal deposition. The two instruments are compared on the following page:


Comparison of Al deposition options


E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) E-beam evaporation (Wordentec) Sputter deposition (Wordentec) Sputter deposition (Sputter-System (Lesker)) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) Thermal evaporation (Wordentec) Thermal evaporation (Thermal Evaporator)
General description

E-beam deposition of Aluminium

E-beam deposition of Aluminium

Sputter deposition of Aluminium

Sputter deposition of Aluminium

Sputter deposition of Aluminium

Aluminum deposition onto unexposed e-beam resist

Aluminum deposition onto unexposed e-beam resist

Pre-clean Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean
Layer thickness 10Å to 1 µm* 10Å to 1 µm* 10Å to ~0.5µm 10Å to ~0.5µm (very time consuming ) 10Å to ~0.5µm 10Å to 0.12 µm 10Å to 1 µm*
Deposition rate 1Å/s to 10Å/s 1Å/s to 15Å/s Depending on process parameters, up to ~2.5 Å/s Depending on process parameters at least up to 0.7 Å/s Depending on process parameters at least up to 1.3 Å/s. See conditions here ~1.5 Å/s to 2 Å/s 0.5, 1, or 2 Å/s
Batch size
  • Up to 4x6" or 3x8" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x4" wafer or
  • 1x6" wafer or

several small samples

  • up to 10x4" wafers or
  • up to 10x6" wafers
  • or many smaller samples
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
  • Many small chips
Pumping time from wafer load

Approx. 20 min

Approx. 1.5 hour

Approx. 1.5 hour

Approx. 10 min

Approx. 5 min plus 6 min transfer time

Approx. 1.5 hour

Approx. 15 min

Allowed materials

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

  • Silicon wafers
  • and almost any
  • Almost that does not degas - see cross contamination sheets for PC1 and PC3
  • Special carrier for III-V materials.

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

Comment * Thickness above 600 nm: ask for permission

It is possible to tilt the substrate.

* Thickness above 600 nm: ask for permission.


**Thickness above 120 nm: ask for permission


* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition

Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation

This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm). The grain size is compared for the different methods.

The conclusion was that e-beam evaporation of aluminium at 15 Å/s gave the best result.

See details of the study here.

Aluminium deposition on AZ5214 for lift-off

Negative photolithography process is recomended.

Positive photolithography process from 1,5 µm is possible especially for thin layers of metal.

The more pattern the easyer lift.

It was tried (jan09) to lift 2.5 µm Al on 4.2µ negative resist on top of 11 µm Apox SiO2 in an acetone sonic-bath. The Al deposition process was done in steps evaporating 500 nm a time with 5 min pause and pressure down to at least 2E-6.

Roughness of thermally evaporated aluminium

A study by AFM was performed to examine Al films deposited with thermal evaporation in the Wordentec. See details here.