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<center><span style="background:#87CEEB">4th Level - Comparison</span></center>
{{cc-nanolab}}
 
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Gold click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Gold click here]'''


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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Resistive thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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! General description
! General description
| E-beam deposition of Au
| E-beam deposition of Au
| E-beam deposition of Au
| Resistive thermal deposition of Au
| Sputter deposition of Au
| Sputter deposition of Au
| Sputter deposition of Au
| Sputter deposition of Au
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion source
|Ar ion etch (only in E-beam evaporator Temescal)
|
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10 Å to 1 µm *
|10 Å to 600 nm *
|10 Å to 5000 Å
|10 Å to 200 nm
|10 Å to 5000 Å **
|10 Å to 500 nm *
|10 Å to 5000 Å **
|10 Å to 500 nm *
|
| very thin, few nm range
|
| very thin, few nm range


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5-10 Å/s
|1-5 Å/s
|1-10 Å/s
|1 Å/s (can be adjusted to around 5 Å/s)
|Depends on process parameters, 1-10 Å/s  
|Depends on process parameters, 1-10 Å/s  
|Depends on process parameters
|Depends on process parameters
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*many smaller pieces
*many smaller pieces
|
|
*24x2" wafers or  
*4x2" wafers or  
*6x4" wafers or
*3x4" wafers or
*6x6" wafers
*1x6" wafer
*1x8" wafer
*many smaller pieces
|
|
*Pieces or
*Pieces or
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Heating
|to 250 C (in 10-pocket evaporator)
|no
|no
|to 600 C
|no
|no
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials


|
|
*Silicon
*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon oxide
* Almost any as long as it does not outgas - see cross-contamination sheets in Labmanager
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
* Silicon
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* All samples allowed in the SEM Supra 2 or 3
* All samples allowed in the SEM Supra 2 or 3


|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
! Comment
! Comment
|
|
* For thicknesses above 600 nm permission is required
* Pumpdown approx 20 min.
* Takes approx. 20 min to pump down.
|
|
* Takes approx. 1 hour to pump down.
*Make sure that all pellets are melted beforehand
*Pumpdown approx. 20 min
|
|
*Takes approx. 10 minutes to load and transfer sample
*Takes approx. 10 minutes to load and transfer sample
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'''*'''  ''For thicknesses above 600 nm write to metal@nanolab.dtu.dk to ensure that there will be enough material in the machine.''
'''*'''  ''For thicknesses above 200 nm write to metal@nanolab.dtu.dk as extra deposition costs a higher fee.''


'''**'''  ''For thicknesses above 200 nm write to metal@nanolab.dtu.dk to ensure that there will be enough material in the machine.''
== Resistive thermal evaporation of Au ==


== Studies of Au deposition processes in the Wordentec==
* [[Specific Process Knowledge/Thin film deposition/Deposition of Gold/Resistive thermal evaporation of Au in Thermal Evaporator|Resistive thermal evaporation of Au in Thermal Evaporator]]
[[/Roughness of Au|Roughness of Au layers]] - ''Roughness of Au layers deposited in the Wordentec''
 
===Wafer temperature===
The wafer temperature during e-beam deposition of 200 nm Au on six wafers has been measured using thermal labels on the backside of the wafers. The following results were obtained:
{| border="1" cellspacing="0" cellpadding="2"
! Wafer
! Temperature [C]
|-
|1
|48
|-
|2
|60
|-
|3
|65
|-
|4
|71
|-
|5
|71
|-
|6
|77
|-
|}
The temperatures are accurate within approximately +/- 3C and probably underestimating the actual wafer temperature slightly. It is observed that the wafer temperature increases with each wafer, thus if wafer temperature is of concern it is advised to reduce the number of wafers per run.


== Adhesion of Au on Si ==
== Adhesion of Au on Si ==
The adhesion of gold on Silicon or Silicon with native oxide is not very good. The Si substrate is often deposited an adhesion layer before the gold deposition. A few nm of Chromium or Titanium works well and they react with the Oxygen of Silicon oxide and present a metallic bond with gold. You can also use polymer or organosilane adhesion layers as exemplified by the work in the next section.  
The adhesion of gold on Silicon or Silicon with native oxide is not very good. The Si substrate is often deposited an adhesion layer before the gold deposition. A few nm of Chromium or Titanium works well and they react with the Oxygen of Silicon oxide and present a metallic bond with gold. You can also use polymer or organosilane adhesion layers as exemplified by the work in the next section.  


For Cr and Ti adhesion layers, a 5 nm to 10 nm thick layer of Cr or Ti is commonly used and it is important to deposit Cr or Ti and then immediately Au. If the vacuum chamber is opened in between, the surface of Cr or Ti will get oxidized and that will give a poor adhesion. If a gold layer needs to be deposited directly on Silicon, then native oxide has to be removed by deep in diluted HF and immediately load the evaporation chamber. And after the deposition, the wafer has to be heated op to get some Au-Si diffusion which improves the adhesion.   
For Cr and Ti adhesion layers, a 5 nm to 10 nm thick layer is commonly used and it is important to deposit Cr or Ti and then immediately Au. If the vacuum chamber is opened in between, the surface of Cr or Ti will get oxidized and that will give a poor adhesion. If a gold layer needs to be deposited directly on Silicon, then native oxide has to be removed by a dip in diluted HF and wafer must be immediately loaded into the evaporation chamber. And after the deposition, the wafer has to be heated up to get some Au-Si diffusion which improves the adhesion.   


*[[/Adhesion layers|Read more about Ti and Cr adhesion layers]].
*[[/Adhesion layers|Read more about Ti and Cr adhesion layers]].
Below you can read about using an organosilane adhesion layer.


== Thin Au layer using APTMS adhesion layer and sputter system Lesker ==
== Thin Au layer using APTMS adhesion layer and sputter system Lesker ==
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{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for the Temescal'''
|bgcolor="#98FB98" |'''Quality control (QC) for the E-beam Evaporator (Temescal) and the E-beam Evaporator (10-pockets)'''
|-
|-
|
|
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the Temescal]<br>
TiAu or CrAu is tested approximately once a month on both of Nanolab's e-beam evaporators.
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the Temescal]<br>
 
'''You can find the QC procedures and data in LabManager here''' (requires login):
 
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure, E-beam Evaporator (Temescal)]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 Newest QC data, E-beam Evaporator (Temescal)]<br>
 
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=511 QC procedure, E-beam Evaporator (10-pockets)]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=511 Newest QC data, E-beam Evaporator (10-pockets)]<br>
 
 


{| {{table}}
{| {{table}}
| align="center" |  
| align="left" valign="top"|
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:400px"
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
 
! QC Recipe:
! QC Recipe:
! Standard recipes/TiAu or Cr/Au
! Standard recipes/TiAu or Cr/Au
|-  
|-  
|Deposition rate
|Deposition rate
|was at 10 Å/s (change to 2 Å/s from October 2022 as it gives less particles)
|2 Å/s
|-
|-
|Thickness
|Thickness
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|-
|-
|}
|}
| align="center" valign="top"|
|-
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
|}
 
 
{| {{table}}
| align="left" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
!QC limits
!QC limits
!Temescal
!Both e-beam evaporators
|-
|-
|Deposition rate deviation
|Deposition rate deviation
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|-
|-
|}
|}
Thickness is measured in 5 points with a stylus profiler. <br>
Thickness is measured in 5 points with a stylus profiler. <br>
Additionally we examine the newly deposited films for particles using the particle scanner (if available, otherwise we use the Jenatech microscope in darkfield mode) and we monitor the sheet resistance of the Ti/Au or Cr/Au films.
Additionally we examine the newly deposited films for particles using the particle scanner (if available, otherwise we use the Jenatech microscope in darkfield mode) and we monitor the sheet resistance of the Ti/Au or Cr/Au films.
|}
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for Wordentec'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=3736&mach=167 QC procedure for Wordentec]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=167 The newest QC data for Wordentec]<br>
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! Process 13
|-
|Deposition rate
|10 Å/s
|-
|Thickness
|10 nm / 90 nm
|-
|Pressure
|Below 4*10<sup>-6</sup> mbar
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
!QC limits
!Wordentec
|-
|Measured average thickness (Å)
|± 10 %
|-
|Lowest accepted deposition rate (Å/s)
|6 Å/s
|-
|}
|-
|}
Thickness is measured in 5 points with a stylus profiler.
|}
|}
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