==Pegasus 4 - 150mm silicon oxide and silicon nitride etching==
==Pegasus 4 - 150mm silicon oxide and silicon nitride etching==
[[Image:Peg3and4 front 2.JPG |frame|right|x250px|The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, {{photo1}}]]
'''The tool is already installed and ready to process. The picoscope, the chamber are working well right now but we still have some troubles with the wafers aligner in the loadlock.
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.
'''
[[Image:Twinx.jpg |frame|left|x300px|The twin Pegasi (3 and 4) have just been rolled into the lab on July 3rd 2018. ]]
'''The user manual and contact information can be found in LabManager:'''
<!-- give the link to the equipment info page in LabManager: -->
The user manual(s), quality control procedure(s) and results, user APV(s) '''are not available''', technical information and contact information can be found in LabManager:
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=456 DRIE Pegasus 4 in LabManager - requires login]
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=265| LabManager]
== Process information ==
== Process information ==
'''[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/StandardRecipes|Standard recipes]]'''
'''Standard recipes'''
*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/Barc etch |Barc etch]]
'''Hardware changes'''
A few hardware modifications have been made on the Pegasus 3/4 since it was installed in 2019. The changes are listed below.
*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/showerheadchange|Change of showerhead in 2019]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/picoscope|Addition of Picoscope oscilloscope system for process monitoring in February 2019]]
=== Other etch processes ===
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Continuous nanostructure etches including nano1.42]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch|Etch processes with DUV masks]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Barc|BARC etches]]
*[[/Barc Etch|Barc Etch]]
*[[/SiO2 Etch|SiO2 Etch]]
*[[/Nitride Etch|Nitride etch with SiO2 etch recipes]]
*[[/Slow etch|Slow etch of silicon nitride and silicon oxide]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Isotropic|Isotropic etches]]
More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/slopedsidewalls|Etches that produce positively sloped sidewalls for imprinting purposes]] -->
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/Waferthinning| Maskless reduction of wafer thicknesses]] -->
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] -->
=== Wafer bonding ===
=== Wafer bonding ===
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
=== Acceptance test ===
The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]].
'''Characterisation of etched trenches'''
Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|'''HERE''']] to find more information about the parameters used on the DRIE-Pegasus process development.
'''Internal Nanolab Process log for Pegasus 1'''
Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus]
Latest revision as of 10:38, 22 August 2023
Feedback to this page: click here Unless otherwise stated, this page is written by DTU Nanolab internal
Pegasus 4 - 150mm silicon oxide and silicon nitride etching
The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, Photo: DTU Nanolab internal
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.
The user manual and contact information can be found in LabManager:
