Sputtering of Ti in Wordentec: Difference between revisions
No edit summary |
|||
| (2 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Sputtering_of_Ti_in_Wordentec click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
== Deposition rate == | == Deposition rate == | ||
| Line 6: | Line 8: | ||
'''Pressure 1*10<sup>-2</sup> mbar, Power 300 W''' | '''Pressure: 1*10<sup>-2</sup> mbar, Power: 300 W''' | ||
The rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018). | The rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018). | ||
Latest revision as of 10:35, 11 May 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Deposition rate
The deposition rate will change with the settings for pressure and power.
Pressure: 1*10-2 mbar, Power: 300 W
The rate in the Wordentec is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018).