Sputtering of Ti in Wordentec: Difference between revisions
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== Deposition rate == | == Deposition rate == | ||
The deposition rate will change with the settings for pressure and | The deposition rate will change with the settings for pressure and power. | ||
'''Pressure 1*10<sup>-2</sup> mbar, | '''Pressure: 1*10<sup>-2</sup> mbar, Power: 300 W''' | ||
The rate is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge). | The rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018). | ||
Latest revision as of 10:35, 11 May 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Deposition rate
The deposition rate will change with the settings for pressure and power.
Pressure: 1*10-2 mbar, Power: 300 W
The rate in the Wordentec is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018).