Specific Process Knowledge/Thin film deposition/Electroplating-Ni: Difference between revisions

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'''Feedback to this page''': '''[mailto:CustomerSupport@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Electroplating-Ni click here]'''
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[[Category: Equipment]]
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
[[Category: Thin Film Deposition]]


== Technotrans microform.200 ==
'''THIS MACHINE HAS BEEN DECOMMISSIONED'''


[[image:choi_2017_Machine_overview.jpg|200x200px|right|thumb|Electroplating-Ni positioned in cleanroom A-1]]
[[Category: Equipment|Thin film Electroplating Ni]]
[[Category: Thin Film Deposition|Electroplating Ni]]


The Technotrans microform.200 (Electroplating-Ni in LabManager) is a machine capable of depositing nickel electrochemically. This is done by lowering the sample into an electrolyte containing nickel ions and then apply a voltage across the sample and the anode. The anode is a basket filled with nickel pellets. The cathode is the sample to be coated with nickel.
== Technotrans microform.200 - DECOMMISSIONED==
 
[[image:Electroplater-D3.jpg|200x200px|right|thumb|Electroplating-Ni positioned in cleanroom D-3]]
 
The Technotrans microform.200 (Electroplating-Ni in LabManager) is a machine capable of depositing nickel electrochemically. This is done by lowering the sample into an electrolyte containing nickel ions and then apply a voltage across the sample and the anode. The anode is a titanium basket filled with nickel pellets. The cathode is the sample to be coated with nickel.


At the anode metallic nickel is oxidized to nickel ions:
At the anode metallic nickel is oxidized to nickel ions:
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The minimal charge accepted by the software on the machine is 0.1 Ah (Ampere-hours). This corresponds to roughly 2 µm of nickel on a four inch wafer. You can abort a program prematurely to achieve even lower thicknesses, but this requires manual control of the machine.
The minimal charge accepted by the software on the machine is 0.1 Ah (Ampere-hours). This corresponds to roughly 2 µm of nickel on a four inch wafer. You can abort a program prematurely to achieve even lower thicknesses, but this requires manual control of the machine.
   
   
The maximum allowed thickness is ~1,4 mm (1400 µm), since a higher thickness will make the release of the sample difficult and likely damage the sample holder. This corresponds to a charge of 53-54 Ah on a four inch wafer.
The maximum allowed thickness is ~1,4 mm (1400 µm), since a higher thickness will make the release of the sample difficult and likely damage the sample holder. This corresponds to a charge of 53-54 Ah on a four inch wafer. Please contact Nanolab before processing your wafer if you intend to deposit more than ~500 µm of nickel, since this can involve special challenges regarding uniformity, roughness and sample release after plating.
   
   
The plating bath is an aqueous solution of nickel sulfamate, boric acid and sulfamic acid. The bath is moderately acidic (pH = 3,5 - 3,8) and the temperature of the bath is around 52°C. The sample will spin at 60 RPM during deposition.
The plating bath is an aqueous solution of nickel sulfamate, boric acid and sulfamic acid. The bath is moderately acidic (pH = 3,70). The pH is kept constant by an automatic pH measurement and sulfamic acid dosing module. The temperature of the bath is 52°C. The sample will spin at 60 RPM during deposition.
   
   
Uniformity across a 4" wafer is around 5% for the standard processes (the edge being slightly thicker than the center of the sample). Running at high current densities will deposit a nickel layer that is quite soft. Decreasing current density will increase tensile strength of the deposited nickel.
Uniformity across a 4" wafer is around 5% for the standard processes (the edge being slightly thicker than the center of the sample). Running at high current densities will deposit a nickel layer that is quite soft. Decreasing current density will increase tensile strength of the deposited nickel.
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<!-- give the link to the equipment info page in LabManager: -->
<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=274 Electroplating-Ni Info on LabManager]
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=274 Electroplating-Ni Info on LabManager]


== Process information ==
== Process information ==
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|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
52*C
52°C
|-
|-
|style="background:LightGrey; color:black"|pH
|style="background:LightGrey; color:black"|pH
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
3,5 - 3,8
3,5 - 3,8 (Recommended by manufacturer)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Sample requirements
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Sample requirements
|style="background:LightGrey; color:black"|Seed metal
|style="background:LightGrey; color:black"|Seed metal
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
100 nm of either NiV, Ti+Au or Cr+Au recommended. Most commonly seed metals are sputtered using the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]].
Most commonly ~85-100 nm of NiV
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
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|style="background:LightGrey; color:black"|Thickness
|style="background:LightGrey; color:black"|Thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
0 - 1400 µm
~20 - 1000 µm


|-
|-
|style="background:LightGrey; color:black"|Uniformity
|style="background:LightGrey; color:black"|Uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Around 10% (depending on sample and process)
Around 2-10% (depending on sample and process)
   
   
|-
|-
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|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
52*C
52°C


|-
|-
|style="background:LightGrey; color:black"|pH
|style="background:LightGrey; color:black"|pH
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
3,5 - 4,0 (3,5 - 3,8 recommended by manufacturer)
~3,65 (maintained automatically)
   
   
|-
|-
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Most materials '''except copper and cobalt'''.
*Most materials '''except copper and cobalt'''.
*Ask Danchip for details.
*Ask Nanolab for details.
|-  
|-  
|}
|}

Latest revision as of 11:29, 15 January 2024

Feedback to this page: click here

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

THIS MACHINE HAS BEEN DECOMMISSIONED

Technotrans microform.200 - DECOMMISSIONED

Electroplating-Ni positioned in cleanroom D-3

The Technotrans microform.200 (Electroplating-Ni in LabManager) is a machine capable of depositing nickel electrochemically. This is done by lowering the sample into an electrolyte containing nickel ions and then apply a voltage across the sample and the anode. The anode is a titanium basket filled with nickel pellets. The cathode is the sample to be coated with nickel.

At the anode metallic nickel is oxidized to nickel ions:

Ni (s) ⇒ Ni2+ (aq) + 2 e-

At the cathode (the sample surface), nickel ions from solution are reduced to metallic nickel:

Ni2+ (aq) + 2 e- ⇒ Ni (s)

The minimal charge accepted by the software on the machine is 0.1 Ah (Ampere-hours). This corresponds to roughly 2 µm of nickel on a four inch wafer. You can abort a program prematurely to achieve even lower thicknesses, but this requires manual control of the machine.

The maximum allowed thickness is ~1,4 mm (1400 µm), since a higher thickness will make the release of the sample difficult and likely damage the sample holder. This corresponds to a charge of 53-54 Ah on a four inch wafer. Please contact Nanolab before processing your wafer if you intend to deposit more than ~500 µm of nickel, since this can involve special challenges regarding uniformity, roughness and sample release after plating.

The plating bath is an aqueous solution of nickel sulfamate, boric acid and sulfamic acid. The bath is moderately acidic (pH = 3,70). The pH is kept constant by an automatic pH measurement and sulfamic acid dosing module. The temperature of the bath is 52°C. The sample will spin at 60 RPM during deposition.

Uniformity across a 4" wafer is around 5% for the standard processes (the edge being slightly thicker than the center of the sample). Running at high current densities will deposit a nickel layer that is quite soft. Decreasing current density will increase tensile strength of the deposited nickel.


The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:


Electroplating-Ni Info on LabManager

Process information

Equipment performance and process related parameters

Parameter Value
Sample dimensions Diameter

50, 100 or 150 mm (~ 2", 4" or 6")

Sample thickness

Maximum 1,0 mm

Process parameters Temperature

52°C

pH

3,5 - 3,8 (Recommended by manufacturer)

Sample requirements Seed metal

Most commonly ~85-100 nm of NiV

Allowed materials

Most materials allowed. See below.

Forbidden materials

Copper, cobalt. See machine manual on LabManager for details


Equipment Electroplating-Ni
Purpose

Electrochemical deposition of nickel

Performance Thickness

~20 - 1000 µm

Uniformity

Around 2-10% (depending on sample and process)

Process parameter range Temperature

52°C

pH

~3,65 (maintained automatically)

Substrates Batch size
  • # 1 x 50 mm wafer
  • # 1 x 100 mm wafer
  • # 1 x 150 mm wafer
  • Maximum sample thickness: 1,0 mm
Allowed materials
  • Most materials except copper and cobalt.
  • Ask Nanolab for details.