Specific Process Knowledge/Lithography/Espacer: Difference between revisions
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Espacer is a chemical that works as a discharging layer when e-beam writing on a non-conducting substrate or more than 500nm of dielectric material in on the top surface, this includes resists; it is spun onto the wafer on top of the resist and easily rinsed off the wafer after e-beam exposure. | |||
Please contact [mailto:lithography@danchip.dtu.dk Lithography] if you wish to | |||
All substrates are grounded to the e-beam cassette when properly loaded. On a non-conducting substrate, the accumulation of charges in the substrates will however destroy the e-beam patterning. To avoid this, a charge dissipating layer is added on top of the e-beam resist; this will provide a conducting layer for the electrons to escape, while high-energy electrons will pass through the layer to expose the resist. | |||
We have Espacer in stock and approved for use in the cleanroom. You can find a guideline for a process flow here: [[media:Process Flow CSAR + ESPACER.docx|Process Flow CSAR + ESPACER.docx]]. Technical information of Espacer can be found here: [[media:Espacer_300_Technical_Info.pdf|Espacer_300_Technical_Info.pdf]], [[media:Espacer_catalog.pdf|Espacer_catalog.pdf]]. | |||
Espacer is a dirty chemical, so we recommend Electra92, or best Thermal Al eg. 20 nm instead | |||
Please contact [mailto:lithography@danchip.dtu.dk Lithography] if you wish to use this material. | |||
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!No ESPACER | !No ESPACER | ||
!ESPACER | !ESPACER | ||
|- | |||
|- | |||
|-style="background:WhiteSmoke; text-align:center; color:black" | |||
|Wafer | |||
|colspan="2"| Borofloat 4" wafers (JB456), no pretreatment | |||
|- | |- | ||
| Line 29: | Line 43: | ||
|ESPACER | |ESPACER | ||
| | | | ||
|1 min @ 2000 rpm (no softbake), [[ | |1 min @ 2000 rpm (no softbake), [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|Spin Coater: Manual All Puropse]] | ||
|- | |- | ||
| Line 35: | Line 49: | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |-style="background:WhiteSmoke; text-align:center; color:black" | ||
|E-beam exposure | |E-beam exposure | ||
|colspan="2"|2 nA, aperture 5, dose 150-310 muC/cm2, SHOT A,10 | |colspan="2"|2 nA, aperture 5, dose 150-310 muC/cm2, SHOT (A,10) | ||
|- | |- | ||
| Line 59: | Line 73: | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |-style="background:WhiteSmoke; text-align:center; color:black" | ||
| | |All doses | ||
|[[File: | |[[File:NoEspacerOverview.png|300px]] | ||
|[[File:ESPACERoverview.png|300px]] | |[[File:ESPACERoverview.png|300px]] | ||
|- | |- | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |-style="background:WhiteSmoke; text-align:center; color:black" | ||
| | |230 muC/cm2 | ||
|[[File: | |[[File:NoEspacerOverviewBasedose.png|300px]] | ||
|[[File:ESPACERbasedose.png|300px]] | |[[File:ESPACERbasedose.png|300px]] | ||
|- | |- | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |-style="background:WhiteSmoke; text-align:center; color:black" | ||
|219 muC/cm2 | |||
|[[File:noEspacerBasedose-5%.png|300px]] | |||
| | | | ||
| | |- | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |||
|Sputter Coated | |||
| | | | ||
|<10nm Pt at DTU CEN | |||
|- | |- | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |-style="background:WhiteSmoke; text-align:center; color:black" | ||
|Characterization | |||
| | | | ||
| | |Zeiss SEM supra 60VP, D-2 | ||
|- | |- | ||
|-style="background:WhiteSmoke; text-align:center; color:black" | |-style="background:WhiteSmoke; text-align:center; color:black" | ||
|230 muC/cm2 | |||
| | | | ||
| [[File:EspacerBorofloat30nmBasedose.png|300px]] | |||
|[[File:EspacerBorofloat30nmBasedose.png|300px]] | |||
|- | |- | ||
Latest revision as of 12:33, 20 August 2021
Espacer is a chemical that works as a discharging layer when e-beam writing on a non-conducting substrate or more than 500nm of dielectric material in on the top surface, this includes resists; it is spun onto the wafer on top of the resist and easily rinsed off the wafer after e-beam exposure.
All substrates are grounded to the e-beam cassette when properly loaded. On a non-conducting substrate, the accumulation of charges in the substrates will however destroy the e-beam patterning. To avoid this, a charge dissipating layer is added on top of the e-beam resist; this will provide a conducting layer for the electrons to escape, while high-energy electrons will pass through the layer to expose the resist.
We have Espacer in stock and approved for use in the cleanroom. You can find a guideline for a process flow here: Process Flow CSAR + ESPACER.docx. Technical information of Espacer can be found here: Espacer_300_Technical_Info.pdf, Espacer_catalog.pdf.
Espacer is a dirty chemical, so we recommend Electra92, or best Thermal Al eg. 20 nm instead
Please contact Lithography if you wish to use this material.
| Process | No ESPACER | ESPACER |
|---|---|---|
| Wafer | Borofloat 4" wafers (JB456), no pretreatment | |
| Resist | AR-P 6200/2 AllResist E-beam resist | |
| Spin Coat | 1 min @ 4000 rpm, softbake 2 min @ 150 degC, thickness ~140nm | |
| ESPACER | 1 min @ 2000 rpm (no softbake), Spin Coater: Manual All Puropse | |
| E-beam exposure | 2 nA, aperture 5, dose 150-310 muC/cm2, SHOT (A,10) | |
| Rinse | Rinsed with hand shower in fumehood, dried with N2 gun | |
| Developing | SX-AR 600-54/6 60 sec, 60 sec IPA rinse | |
| Characterization | Nikon ECLIPSE optical microscope, E-5 | |
| All doses | 
|
|
| 230 muC/cm2 | 
|
|
| 219 muC/cm2 | 
|
|
| Sputter Coated | <10nm Pt at DTU CEN | |
| Characterization | Zeiss SEM supra 60VP, D-2 | |
| 230 muC/cm2 | 
| |