Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
Jump to navigation
Jump to search
THIS PAGE IS UNDER CONSTRUCTION
| Line 17: | Line 17: | ||
''' | ''' | ||
To study the coherence between the temperature and | To study the coherence between the temperature of the Predep and dive-in for doping with phosphorus in DTU-Danchip Phosphorus Predep furnace (A4). | ||
''' | ''' | ||
====Study setup==== | ====Study setup==== | ||
''' | ''' | ||
Revision as of 11:49, 25 February 2013
The furnace A4 phosphorus predep(N-predep) can be used to predeposit silicon wafers with phosphor. The silicon wafers are positioned in a quarts boat. Phosphor is predeposited in the silicon wafers.
In preparation
THIS PAGE IS UNDER CONSTRUCTION
Test of Phosphorus Predep furnace
Purpose
To study the coherence between the temperature of the Predep and dive-in for doping with phosphorus in DTU-Danchip Phosphorus Predep furnace (A4).
Study setup
There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes.
| Run # | Temperature | Process time with POCl3 | Anneal time N2 | Wafer # |
| 1 | 850 oC | 15 minutes | 20 miuntes | 1, 2, 3, 4 |
| 2 | 900 oC | 15 minutes | 20 miuntes | 5, 6, 7, 8 |
| 3 | 950 oC | 15 minutes | 20 miuntes | 9, 10, 11, 12 |
| 4 | 1000 oC | 15 minutes | 20 miuntes | 13, 14, 15, 16 |
| 5 | 1050 oC | 15 minutes | 20 miuntes | 17, 18, 19, 20 |