Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

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Revision as of 12:15, 21 November 2007

The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.

The Bosch process:

The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF6 and O2 alternates with a passivation phase with C4F8.

Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch deepetch.


Recipe: Shallolr
SF6 flow 32 sccm
O2 flow 8 sccm
Pressure 80 mTorr
RF-power 30 W
Phase Etch cycle Passivation cycle




Shallolr
First header Second header
upper left  

right side

lower left lower middle
A table in a table
File:Wiki.png File:Wiki.png
align="center" colspan="2" style="border-top:1px solid red; border-right:1px 
         solid red; border-bottom:2px solid red; border-left:1px solid red;" |

Two Wikimedia logos

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