Specific Process Knowledge/Characterization: Difference between revisions
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==Overview of characteristics and where to measure it== | ==Overview of characteristics and where to measure it== | ||
{| {{table } } | {| {{table } } | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"| | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|IR-camera | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]] | ||
| width=" | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]] | ||
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# Using the cross section method | # Using the cross section method | ||
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== Choose characterization topic == | == Choose characterization topic == | ||
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]] | |||
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | |||
*[[/Element analysis|Element analysis]] | *[[/Element analysis|Element analysis]] | ||
*[[/Measurement of film thickness and optical constants| | *[[/Measurement of film thickness and optical constants|Film thickness and optical constants]] | ||
*[[/Hardness measurement|Hardness measurement]] | |||
*[[/PL mapper|Photoluminescence mapping]] | *[[/PL mapper|Photoluminescence mapping]] | ||
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] --> | |||
*[[/Sample imaging|Sample imaging]] | *[[/Sample imaging|Sample imaging]] | ||
*[[/Sample preparation|Sample preparation for inspection]] | *[[/Sample preparation|Sample preparation for inspection]] | ||
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] | |||
*[[/Stress measurement|Stress measurement]] | *[[/Stress measurement|Stress measurement]] | ||
*[[/Thickness Measurer|Wafer thickness measurement]] | *[[/Thickness Measurer|Wafer thickness measurement]] | ||
*[[/Topographic measurement|Topographic measurement]] | *[[/Topographic measurement|Topographic measurement]] | ||
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]] | *[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]] | ||
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===XRD=== | ===XRD=== | ||
*[[/XRD|General page on XRD | *[[/XRD|General page on XRD]], page describing general info relevant to both our XRD's | ||
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders | *[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders | ||
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom | *[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom | ||
*[[/XRD/XRD SmartLab 9kW Rotating Anode|XRD SmartLab 9kW Rotating Anode]] multipurpose system outside the cleanroom | |||
===Various=== | ===Various=== | ||
Latest revision as of 12:00, 9 December 2024
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Unless otherwise stated, this page is written by DTU Nanolab internal
Overview of characteristics and where to measure it
| Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Particle scanner | IR-camera | III-V ECV-profiler | Microspectrophotometer (Craic 20/30 PV) | |
| Breakdown voltage | ||||||||||||||||||||
| Carrier density/doping profile | x | |||||||||||||||||||
| Charge carrier life time | x | |||||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||||
| Crystallinity | x | |||||||||||||||||||
| Deposition uniformity | x | x | x | |||||||||||||||||
| Dimensions(in plane) | x | x | (x) | (x) | x | x | ||||||||||||||
| Dimensions(height)/Topography | (x) | (x) | x | x | x | |||||||||||||||
| Electrical conductivity | x | |||||||||||||||||||
| Element analysis | x | x | x 4) | x 4) | ||||||||||||||||
| Film stress | x | x 7) | ||||||||||||||||||
| Imaging | x | x | x | x | x | |||||||||||||||
| Material Hardness | x | |||||||||||||||||||
| Band gap | x | x | x | |||||||||||||||||
| Particles | x | x | x | x | x | |||||||||||||||
| Phase changes | ||||||||||||||||||||
| Reflectivity | x | x | x 6) | x | ||||||||||||||||
| Refractive index | x | x | ||||||||||||||||||
| Resistivity | x | |||||||||||||||||||
| Step coverage | x 1) | x 1) | ||||||||||||||||||
| Surface roughness | x | x | x | x | ||||||||||||||||
| Thermal conductivity | ||||||||||||||||||||
| Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||||||
| Voids in wafer bonding | x | x | x | |||||||||||||||||
| Wafer thickness | x 1) | x 1) | x | |||||||||||||||||
| Work function | x |
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
- Only for crystalline films
Choose characterization topic
- Carrier density (doping) profiler
- Contact angle measurement
- Element analysis
- Film thickness and optical constants
- Hardness measurement
- Photoluminescence mapping
- Four-Point Probe (Resistivity measurement)
- Sample imaging
- Sample preparation for inspection
- Scanning Electron Microscopy
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- X-ray diffraction
Choose equipment
AFM
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
Element analysis
Optical and stylus profilers
- Optical Profiler (Sensofar)
- Dektak XTA stylus profiler
- P17 stylus profiler from KLA-Tencor
- Dektak 3ST stylus profiler
- Stylus Profiler:Dektak150
Optical microscopes
Optical characterization
SEMs at DTU Nanolab - building 307/314
SEM's in building 346
TEMs at DTU Nanolab - building 307/314
XRD
- General page on XRD, page describing general info relevant to both our XRD's
- XRD Powder, tabletop XRD for Bregg-Brentano measurements of powders
- XRD SmartLab, advanced multipurpose instrument in the cleanroom
- XRD SmartLab 9kW Rotating Anode multipurpose system outside the cleanroom