Specific Process Knowledge/Characterization: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,409 edits
m →‎Overview of characteristics and where to measure it: changed link since there are now two optical profilers
Jehan (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891, Bureaucrats, danchip, Administrators
1,074 edits
 
(44 intermediate revisions by 5 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]''' <br>
{{CC1}}
==Overview of characteristics and where to measure it==


==Overview of characteristics and where to measure it==
{| {{table } }
{| {{table } }
|  width="50" align="center" style="background:#f0f0f0;"|  
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|  
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Profiler|Optical profiler]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XPS|XPS]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XRD|XRD]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/DSC_Perkin_Elmer|Differential Scanning Calorimeter DSC]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|IR-camera
|  width="50" align="center" style="background:#f0f0f0;"|'''IR-camera'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Breakdown voltage
|align="left"| Breakdown voltage
||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Carrier density/doping profile  
|align="left"| Carrier density/doping profile  
||||||||||||||||||||||||||||||||||||||||x
|||||||||||||||||||||||||||||||||||||x||


|-
|-
Line 41: Line 42:
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||x||||||
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
Line 47: Line 48:
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
Line 59: Line 60:
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x   7)||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
Line 68: Line 69:
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||||x||||||||||||||||||||
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||||x||||
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes||||||||||||||||||||||||||||||||||x||||||
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
Line 89: Line 90:
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||||||||||||||||
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
Line 98: Line 99:
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||||x||
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||||
|-
|}


|-




|
|}


# Using the cross section method
# Using the cross section method
Line 115: Line 118:
# Only single layer
# Only single layer
# Good for characterization of VCSEL structures and DBR mirrors
# Good for characterization of VCSEL structures and DBR mirrors
# Only for crystalline films


== Choose characterization topic ==
== Choose characterization topic ==
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Element analysis|Element analysis]]
*[[/Element analysis|Element analysis]]
*[[/Measurement of film thickness and optical constants|Measurement of film thickness and optical constants]]
*[[/Measurement of film thickness and optical constants|Film thickness and optical constants]]
*[[/Hardness measurement|Hardness measurement]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[/Sample imaging|Sample imaging]]
*[[/Sample imaging|Sample imaging]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[/Stress measurement|Stress measurement]]
*[[/Stress measurement|Stress measurement]]
*[[/Hardness measurement|Hardness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]  
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]  
<!--
<!--
*[[/Other electrical measurements|Other electrical measurements]]
*[[/Other electrical measurements|Other electrical measurements]]
Line 139: Line 143:
===AFM===
===AFM===
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']]
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']]
===Electrical measurements===
*[[/4-Point Probe|4-Point Probe]]
*[[/Probe station|Probe station]]
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]


===Element analysis===
===Element analysis===
Line 147: Line 156:
*[[/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]]
*[[/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]]
*[[/Profiler#Dektak XTA_new stylus profiler|Dektak XTA stylus profiler]]
*[[/Profiler#Dektak XTA_new stylus profiler|Dektak XTA stylus profiler]]
*[[/Profiler#Dektak _8 stylus _profiler|Dektak 8 stylus profiler]]
*[[/Profiler#Stylus Profiler (Tencor P17)|P17 stylus profiler from KLA-Tencor]]
*[[/Profiler#Dektak_III-V_Profiler|Dektak 3ST stylus profiler]]
*[[/Profiler#Dektak_III-V_Profiler|Dektak 3ST stylus profiler]]
*[[/Profiler#Stylus_Profiler:_Dektak150|Stylus Profiler:Dektak150]]
*[[/Profiler#Stylus_Profiler:_Dektak150|Stylus Profiler:Dektak150]]
Line 153: Line 162:
===Optical microscopes===
===Optical microscopes===
*[[/Optical microscope|Optical microscopes]]
*[[/Optical microscope|Optical microscopes]]
===Optical characterization===
===Optical characterization===
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
Line 168: Line 178:
===SEM's in building 346===
===SEM's in building 346===
*[[/SEM: Scanning Electron Microscopy |SEM Comparison page]]
*[[/SEM: Scanning Electron Microscopy |SEM Comparison page]]
*[[/SEM LEO|SEM LEO]]
*[[/SEM Supra 1|SEM Supra 1]]
*[[/SEM Supra 1|SEM Supra 1]]
*[[/SEM Supra 2|SEM Supra 2]]
*[[/SEM Supra 2|SEM Supra 2]]
Line 179: Line 188:
*[[LabAdviser/CEN/Tecnai TEM |Tecnai TEM]]
*[[LabAdviser/CEN/Tecnai TEM |Tecnai TEM]]


===Electrical measurements===
===XRD===
*[[/4-Point Probe|4-Point Probe]]
*[[/XRD|General page on XRD]], page describing general info relevant to both our XRD's
*[[/Probe station|Probe station]]
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom
*[[/XRD/XRD SmartLab 9kW Rotating Anode|XRD SmartLab 9kW Rotating Anode]] multipurpose system outside the cleanroom


===Various===
===Various===
*[[/Drop Shape Analyzer|Drop Shape Analyzer]]
*[[/Drop Shape Analyzer|Drop Shape Analyzer]]
*[[/Thickness Measurer|Thickness Measurer]]
*[[/Thickness Measurer|Thickness Measurer]]
*[[/DSC Perkin Elmer|DSC Perkin Elmer - Differential Scanning Calorimetry]]
*[[/Hardness measurement|Hardness tester]]
*[[/Hardness measurement|Hardness tester]]
*[[/Particle Scanner Takano|Particle Scanner Takano]]
==Decommissioned equipment==
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
*[[/X-Ray Diffractometer|X-Ray Diffractometer ]]
*[[/X-Ray Diffractometer|Phillips X-Ray Diffractometer that was owned by DTU Fotonik]]
*[[/XRD|XRD SmartLab]]

Latest revision as of 12:00, 9 December 2024

Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal

Overview of characteristics and where to measure it

Optical Micro- scopes SEM (incl. EDX) AFM Stylus profiler Optical profiler Filmtek (reflec- tometer) Ellip- someter Thickness stylus XPS PL mapper 4-point probe Probe station XRD Life time scanner Drop shape analyser Hardness tester Particle scanner IR-camera III-V ECV-profiler Microspectrophotometer (Craic 20/30 PV)
Breakdown voltage
Carrier density/doping profile x
Charge carrier life time x
Contact angle hydrophobic/hydrophillic x
Crystallinity x
Deposition uniformity x x x
Dimensions(in plane) x x (x) (x) x x
Dimensions(height)/Topography (x) (x) x x x
Electrical conductivity x
Element analysis x x x 4) x 4)
Film stress x x 7)
Imaging x x x x x
Material Hardness x
Band gap x x x
Particles x x x x x
Phase changes
Reflectivity x x x 6) x
Refractive index x x
Resistivity x
Step coverage x 1) x 1)
Surface roughness x x x x
Thermal conductivity
Thin film thickness x 1) x 1) x 2) x 2) x x x x 5) x 3) x
Voids in wafer bonding x x x
Wafer thickness x 1) x 1) x
Work function x



  1. Using the cross section method
  2. Using the create step method
  3. With known resistivity
  4. Composition information for crystalline materials
  5. Only single layer
  6. Good for characterization of VCSEL structures and DBR mirrors
  7. Only for crystalline films

Choose characterization topic

Choose equipment

AFM

Electrical measurements

Element analysis

Optical and stylus profilers

Optical microscopes

Optical characterization

SEMs at DTU Nanolab - building 307/314

SEM's in building 346

TEMs at DTU Nanolab - building 307/314

XRD

Various

Decommissioned equipment

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization&oldid=50279"