Specific Process Knowledge/Characterization: Difference between revisions

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== Choose topic ==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]''' <br>
*Surface imaging
{{CC1}}
*Topographic measurement
==Overview of characteristics and where to measure it==
*Stress measurement
*Filmthickness measurement
*Element analysis
*Measurement of optical constants
*Hydrophobicity measurement
*Resistivity measurement
*Wafer thickness measurement


{| {{table } }
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|IR-camera
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Breakdown voltage
|||||||||||||||||||||||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Carrier density/doping profile
|||||||||||||||||||||||||||||||||||||x||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||x
|-
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x  7)||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||x
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||||x
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||x
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||||
|-
|}
# Using the cross section method
# Using the create step method
# With known resistivity
# Composition information for crystalline materials
# Only single layer
# Good for characterization of VCSEL structures and DBR mirrors
# Only for crystalline films
== Choose characterization topic ==
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Element analysis|Element analysis]]
*[[/Measurement of film thickness and optical constants|Film thickness and optical constants]]
*[[/Hardness measurement|Hardness measurement]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[/Sample imaging|Sample imaging]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[/Stress measurement|Stress measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]
<!--
*[[/Other electrical measurements|Other electrical measurements]]
-->


== Choose equipment ==
== Choose equipment ==


===[[SEM: Scanning Electron Microscopy]]===
===AFM===
*LEO SEM
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']]
*FEI SEM
 
*JEOL SEM
===Electrical measurements===
*[[/4-Point Probe|4-Point Probe]]
*[[/Probe station|Probe station]]
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]
 
===Element analysis===
*[[/SEM Supra 2|SEM with EDX]]
*[[/XPS|XPS tools ]]
 
===Optical and stylus profilers===
*[[/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]]
*[[/Profiler#Dektak XTA_new stylus profiler|Dektak XTA stylus profiler]]
*[[/Profiler#Stylus Profiler (Tencor P17)|P17 stylus profiler from KLA-Tencor]]
*[[/Profiler#Dektak_III-V_Profiler|Dektak 3ST stylus profiler]]
*[[/Profiler#Stylus_Profiler:_Dektak150|Stylus Profiler:Dektak150]]
 
===Optical microscopes===
*[[/Optical microscope|Optical microscopes]]
 
===Optical characterization===
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
*[[/Optical characterization#Filmtek_4000|Filmtek 4000]]
*[[/PL mapper|PL mapper - ''Photoluminescence mapper'']]
*[[/Lifetime scanner MDPmap|Lifetime scanner MDPmap]]
 
===SEMs at DTU Nanolab - building 307/314===
<!-- *[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] -->
*[[LabAdviser/CEN/Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]]
*[[LabAdviser/CEN/Nova NanoSEM 600|SEM FEI Nova 600 NanoSEM]]
*[[LabAdviser/CEN/Quanta FEG 200 ESEM|SEM FEI Quanta 200 ESEM FEG]]
<!-- *[[LabAdviser/CEN/Inspect S|SEM Inspect S]] -->
 
===SEM's in building 346===
*[[/SEM: Scanning Electron Microscopy |SEM Comparison page]]
*[[/SEM Supra 1|SEM Supra 1]]
*[[/SEM Supra 2|SEM Supra 2]]
*[[/SEM Supra 3|SEM Supra 3]]
*[[/SEM Tabletop 1|SEM Tabletop 1]]
 
===TEMs at DTU Nanolab - building 307/314===
*[[LabAdviser/CEN/Titan ATEM |Titan ATEM]]
*[[LabAdviser/CEN/Titan ETEM |Titan ETEM]]
*[[LabAdviser/CEN/Tecnai TEM |Tecnai TEM]]
 
===XRD===
*[[/XRD|General page on XRD]], page describing general info relevant to both our XRD's
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom
*[[/XRD/XRD SmartLab 9kW Rotating Anode|XRD SmartLab 9kW Rotating Anode]] multipurpose system outside the cleanroom
 
===Various===
*[[/Drop Shape Analyzer|Drop Shape Analyzer]]
*[[/Thickness Measurer|Thickness Measurer]]
*[[/Hardness measurement|Hardness tester]]
*[[/Particle Scanner Takano|Particle Scanner Takano]]


===[[AFM: Atomic Force Microscopy]]===
==Decommissioned equipment==
*Nanoman - ''AFM - can be used for nanomanipulation''
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
===[[Profiler]]===
*[[/X-Ray Diffractometer|Phillips X-Ray Diffractometer that was owned by DTU Fotonik]]
*Tencor
*[[Dektak 8 stylus profiler]]
===[[Optical microscope]]===
===[[Optical characterization]]===
*Ellipsometer
*Filmtek
*Prism Coupler
===[[SIMS: Secondary Ion Mass Spectrometry]]===
*Atomika SIMS
===Drop Shape Analyser===
===4-Point Probe===
===Stylus Thickness Measure===

Latest revision as of 10:52, 9 October 2024

Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal

Overview of characteristics and where to measure it

Optical Micro- scopes SEM (incl. EDX) AFM Stylus profiler Optical profiler Filmtek (reflec- tometer) Ellip- someter Thickness stylus XPS PL mapper 4-point probe Probe station XRD Life time scanner Drop shape analyser Hardness tester Particle scanner IR-camera III-V ECV-profiler Microspectrophotometer (Craic 20/30 PV)
Breakdown voltage
Carrier density/doping profile x
Charge carrier life time x
Contact angle hydrophobic/hydrophillic x
Crystallinity x
Deposition uniformity x x x
Dimensions(in plane) x x (x) (x) x x
Dimensions(height)/Topography (x) (x) x x x
Electrical conductivity x
Element analysis x x x 4) x 4)
Film stress x x 7)
Imaging x x x x x
Material Hardness x
Band gap x x x
Particles x x x x x
Phase changes
Reflectivity x x x 6) x
Refractive index x x
Resistivity x
Step coverage x 1) x 1)
Surface roughness x x x x
Thermal conductivity
Thin film thickness x 1) x 1) x 2) x 2) x x x x 5) x 3) x
Voids in wafer bonding x x x
Wafer thickness x 1) x 1) x
Work function x



  1. Using the cross section method
  2. Using the create step method
  3. With known resistivity
  4. Composition information for crystalline materials
  5. Only single layer
  6. Good for characterization of VCSEL structures and DBR mirrors
  7. Only for crystalline films

Choose characterization topic

Choose equipment

AFM

Electrical measurements

Element analysis

Optical and stylus profilers

Optical microscopes

Optical characterization

SEMs at DTU Nanolab - building 307/314

SEM's in building 346

TEMs at DTU Nanolab - building 307/314

XRD

Various

Decommissioned equipment

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