Specific Process Knowledge/Characterization/XRD: Difference between revisions

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== XRD SmartLab ==
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


The Rigaku SmartLab is an advanced XRD for measuring on thin films. All thin films can be measured without fixating the sample, as the system has a so called In-Plane arm.


[[image:XRD_SmartLab.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]]
=XRD at DTU Nanolab=
We have two X-ray diffraction setups in building 346:
*The [[/XRD_SmartLab|XRD SmartLab]] primarily for thin film analysis inside the cleanroom.
*The [[/XRD SmartLab 9kW Rotating Anode|XRD SmartLab 9kW Rotating Anode]] multipurpose system outside the cleanroom.
*The [[/XRD_Powder|XRD Powder]] for phase analysis of powders outside the cleanroom.


==Experiments performed with XRD==
*[[/Process Info|List and description of possible XRD measurements with typical setup requirements]] Note mostly relevant for XRD Smartlab


'''The user manual(s), user APV(s), technical information, and contact information can be found in LabManager:'''
==Data analysis==
For data analysis, we recommend using Rigaku SmartLab Studio for both thinfilms and basic powder analysis.
If more advanced powder analysis is needed we provide access to a remote desktop with a licence for the excellent Malvern Panalytical software, HighScore.


[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=428  XRD SmartLab in LabManager]
*[[/software|Installing SmartLab Studio II]]
*[[/dataconversion|Converting data from XRD Powder to SmartLab Studio II]]
*[[/SLSII_analysis|Guide for using SmartLab Studio II for data analysis]]
*[[/HighScore_analysis|Guide for using HighScore Plus for advanced powder data analysis]]


== Process information ==
Apart from this commercial software a wide range of free software is available online for data analysis. [https://xrd.mit.edu/xrd-software Here are some suggestions from MIT].


<!--*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]-->
==Comparison of the XRDs at Nanolab==
 
==Software for analysis==
The software packages used for data analysis are available on the equipment computer, but we recommend that you install it on your personal computer. To run the software you need a USB dongle with a license on, these can be borrowed from Rebecca and Kristian in room 347-077. We only have 9 dongles available, so when you are done please return the dongle to danchip.
 
The software can be found on "CleanroomDrive\_Equipment\XRD\Rigaku software\RILauncher", it should be possible to install the software without a dongle. To use the software you have to log in. The user is: Administrator. There is no password.
 
==Equipment performance and process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
Line 28: Line 30:
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>XRD SmartLab</b>
|style="background:WhiteSmoke; color:black"|<b>XRD SmartLab</b>
|style="background:WhiteSmoke; color:black"|<b>XRD SmartLab 9kW Rotating Anode</b>
|style="background:WhiteSmoke; color:black"|<b>XRD Powder</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"| Crystal structure analysis and thin film thickness measurement
|style="background:LightGrey; color:black"| Crystal structure analysis  
 
and thin film thickness measurement
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Phase ID
*Phase ID
Line 44: Line 50:
*Roughness
*Roughness
*Density
*Density
|style="background:WhiteSmoke; color:black"|
*Phase ID
*Crystal Size
*Crystallinity
*Quality and degree of orientation
*3D orientation
*Latice strain
*Composition
*Twist
*3D lattice constant
*Thickness
*Roughness
*Density
|style="background:WhiteSmoke; color:black"|
*Phase ID
*Crystal Size
*Crystallinity
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="6"|X-ray generator
|style="background:LightGrey; color:black"|
Maximum rated output
|style="background:WhiteSmoke; color:black"|
3 kW
|style="background:WhiteSmoke; color:black"|
9 kW
|style="background:WhiteSmoke; color:black"|
600 W
|-
|style="background:LightGrey; color:black"|
Rated tube voltage
|style="background:WhiteSmoke; color:black"|
20 to 45 kV
|style="background:WhiteSmoke; color:black"|
20 to 45 kV
|style="background:WhiteSmoke; color:black"|
40 kV
|-
|style="background:LightGrey; color:black"|
Rated tube current
|style="background:WhiteSmoke; color:black"|
2 to 60 mA
|style="background:WhiteSmoke; color:black"|
2 to 200 mA
|style="background:WhiteSmoke; color:black"|
15 mA
|-
|style="background:LightGrey; color:black"|
Type
|style="background:WhiteSmoke; color:black"|
Sealed tube
|style="background:WhiteSmoke; color:black"|
Rotating Anode
|style="background:WhiteSmoke; color:black"|
Sealed tube
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
Response 1
Target
|style="background:WhiteSmoke; color:black"|
Cu
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
Cu
*Performance range 2
|style="background:WhiteSmoke; color:black"|
Cu
|-
|-
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
Response 2
Focus size
|style="background:WhiteSmoke; color:black"|
0.4 mm x 8 mm (Line/Point)
|style="background:WhiteSmoke; color:black"|
0.1-0.5 mm x 8 mm (Line/Point)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
0.4 mm x 12 mm (Line)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Goniometer
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|
Scanning mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
incident / receiver coupled or independent
|style="background:WhiteSmoke; color:black"|
incident / receiver coupled or independent
|style="background:WhiteSmoke; color:black"|
incident / receiver coupled
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|
Goniomenter radius
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
300 mm
|style="background:WhiteSmoke; color:black"|
300 mm
|style="background:WhiteSmoke; color:black"|
145 mm
|-
|style="background:LightGrey; color:black"|
Minimum step size
|style="background:WhiteSmoke; color:black"|
0.0001° (0.36")
|style="background:WhiteSmoke; color:black"|
0.0001° (0.36")
|style="background:WhiteSmoke; color:black"|
0.001° (3.6")
|-
|style="background:LightGrey; color:black"|
Sample stage motion
|style="background:WhiteSmoke; color:black"|
*&chi;:-5~+95°
*&phi;:0~360°
*Z:-4~+1 mm
*X,Y:&plusmn;50 mm for a 100 mm wafer
*Rx,Ry:-5~+5°
|style="background:WhiteSmoke; color:black"|
*&chi;:-5~+95°
*&phi;:0~360°
*Z:-4~+1 mm
*X,Y:&plusmn;50 mm for a 100 mm wafer
*Rx,Ry:-5~+5°
|style="background:WhiteSmoke; color:black"|
Fixed with rotation
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Optics
|style="background:LightGrey; color:black"|Incident side
|style="background:WhiteSmoke; color:black"|
*Cross Beam Optics(CBO)
*Ge(220)x2 monochromator
*In-Plane Parallel Slit Collimator (PSC)
*Soller slit
*Automatic variable divergence slit
*Length limiting slits
|style="background:WhiteSmoke; color:black"|
*Cross Beam Optics(CBO)
*Ge(400)x2 monochromator
*In-Plane Parallel Slit Collimator (PSC)
*Soller slit
*Automatic variable divergence slit
*Length limiting slits
|style="background:WhiteSmoke; color:black"|
*0.04° soller slit
*Ni and Cu filter
*Divergence slits
*Beam masks
|-
|style="background:LightGrey; color:black"|Receiver side
|style="background:WhiteSmoke; color:black"|
*Automatic variable scattering slit
*Automatic variable receiver slit
*Parallel slit analysers (PSA)
*Ge(220)x2 analyser
|style="background:WhiteSmoke; color:black"|
*Automatic variable scattering slit
*Automatic variable receiver slit
*Parallel slit analysers (PSA)
*Ge(400)x2 analyser
|style="background:WhiteSmoke; color:black"|
*0.04° soller slit
*Ni filter
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Measurement temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|style="background:WhiteSmoke; color:black"|
May be heated in N<sub><sub>2</sub></sub> up to 500°C
|-
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
up to 150 mm wafers
 
Thickness max 21 mm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
up to 150 mm wafers
up to 150 mm wafers
Thickness max 21 mm
|style="background:WhiteSmoke; color:black"|
Only for powders
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
All materials approved in the cleanroom.
*Allowed material 2
 
No powders or dusty materials.
|style="background:WhiteSmoke; color:black"|
All materials have to be approved
|style="background:WhiteSmoke; color:black"|
All materials have to be approved
|-  
|-  
|}
|}


<br clear="all" />
<br clear="all" />

Latest revision as of 18:09, 25 September 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


XRD at DTU Nanolab

We have two X-ray diffraction setups in building 346:

Experiments performed with XRD

Data analysis

For data analysis, we recommend using Rigaku SmartLab Studio for both thinfilms and basic powder analysis. If more advanced powder analysis is needed we provide access to a remote desktop with a licence for the excellent Malvern Panalytical software, HighScore.

Apart from this commercial software a wide range of free software is available online for data analysis. Here are some suggestions from MIT.

Comparison of the XRDs at Nanolab

Equipment XRD SmartLab XRD SmartLab 9kW Rotating Anode XRD Powder
Purpose Crystal structure analysis

and thin film thickness measurement

  • Phase ID
  • Crystal Size
  • Crystallinity
  • Quality and degree of orientation
  • 3D orientation
  • Latice strain
  • Composition
  • Twist
  • 3D lattice constant
  • Thickness
  • Roughness
  • Density
  • Phase ID
  • Crystal Size
  • Crystallinity
  • Quality and degree of orientation
  • 3D orientation
  • Latice strain
  • Composition
  • Twist
  • 3D lattice constant
  • Thickness
  • Roughness
  • Density
  • Phase ID
  • Crystal Size
  • Crystallinity
X-ray generator

Maximum rated output

3 kW

9 kW

600 W

Rated tube voltage

20 to 45 kV

20 to 45 kV

40 kV

Rated tube current

2 to 60 mA

2 to 200 mA

15 mA

Type

Sealed tube

Rotating Anode

Sealed tube

Target

Cu

Cu

Cu

Focus size

0.4 mm x 8 mm (Line/Point)

0.1-0.5 mm x 8 mm (Line/Point)

0.4 mm x 12 mm (Line)

Goniometer

Scanning mode

incident / receiver coupled or independent

incident / receiver coupled or independent

incident / receiver coupled

Goniomenter radius

300 mm

300 mm

145 mm

Minimum step size

0.0001° (0.36")

0.0001° (0.36")

0.001° (3.6")

Sample stage motion

  • χ:-5~+95°
  • φ:0~360°
  • Z:-4~+1 mm
  • X,Y:±50 mm for a 100 mm wafer
  • Rx,Ry:-5~+5°
  • χ:-5~+95°
  • φ:0~360°
  • Z:-4~+1 mm
  • X,Y:±50 mm for a 100 mm wafer
  • Rx,Ry:-5~+5°

Fixed with rotation

Optics Incident side
  • Cross Beam Optics(CBO)
  • Ge(220)x2 monochromator
  • In-Plane Parallel Slit Collimator (PSC)
  • Soller slit
  • Automatic variable divergence slit
  • Length limiting slits
  • Cross Beam Optics(CBO)
  • Ge(400)x2 monochromator
  • In-Plane Parallel Slit Collimator (PSC)
  • Soller slit
  • Automatic variable divergence slit
  • Length limiting slits
  • 0.04° soller slit
  • Ni and Cu filter
  • Divergence slits
  • Beam masks
Receiver side
  • Automatic variable scattering slit
  • Automatic variable receiver slit
  • Parallel slit analysers (PSA)
  • Ge(220)x2 analyser
  • Automatic variable scattering slit
  • Automatic variable receiver slit
  • Parallel slit analysers (PSA)
  • Ge(400)x2 analyser
  • 0.04° soller slit
  • Ni filter
Substrates Measurement temperature

Room temperature

Room temperature

May be heated in N2 up to 500°C

Substrate size

up to 150 mm wafers

Thickness max 21 mm

up to 150 mm wafers

Thickness max 21 mm

Only for powders

Allowed materials

All materials approved in the cleanroom.

No powders or dusty materials.

All materials have to be approved

All materials have to be approved