Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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!Generel description | !Generel description | ||
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*Evaporation of Ti pellets in the presence of a O<sub>2</sub> flow. | *Evaporation of Ti or TiO<sub>2</sub> pellets in the presence of a O<sub>2</sub> flow. | ||
*Can heat up to 250 °C | |||
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*Reactive DC sputtering of Ti target | *Reactive DC sputtering of Ti target | ||
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*Reactive pulsed DC sputtering | *Reactive pulsed DC sputtering | ||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | *Reactive HIPIMS (high-power impulse magnetron sputtering) | ||
*Can heat up to 6000 °C | |||
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*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma | *Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma | ||
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*ALD (atomic layer deposition) of TiO<sub>2</sub> | *ALD (atomic layer deposition) of TiO<sub>2</sub> | ||
*Can heat up to 350 °C | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Stoichiometry | !Stoichiometry and form | ||
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*Can probably be varied, expect somewhat O-poor composition | *Can probably be varied, expect somewhat O-poor composition | ||
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!Deposition rate | !Deposition rate | ||
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*1-10 Å/s Ti deposition rate ( | *1-10 Å/s Ti deposition rate (oxidized layer growth should be faster; actual growth rate will need testing) | ||
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*not yet known, probably faster than Sputter-System(Lesker) | *not yet known, probably faster than Sputter-System(Lesker) | ||
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!More info on TiO2 | !More info on TiO2 | ||
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* | *Expect lower density than bulk material of same stoichiometry. | ||
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*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]] | *[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]] |
Latest revision as of 10:46, 29 August 2024
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All contents by Nanolab staff.
Deposition of Titanium Oxide
Titanium oxide can be deposited at Nanolab by sputtering, e-beam deposition, or ALD (atomic layer deposition). In sputtering and e-beam deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry. The oxygen flow in e-beam evaporation is lower than in sputtering, so it may not be possible to obtain fully oxidized TiO2, though we have not yet verified this.
- TiO2 deposition using ALD
- TiO2 deposition using Sputter-System Metal-Oxide(PC1)
- TiO2 deposition in Sputter System (Lesker)
We also used to have the option to sputter-deposit TiO2 with the IBE/IBSD Ionfab300.
Comparison of the methods for deposition of Titanium Oxide
E-beam evaporator (10-pockets) | Sputter-system Metal-Oxide(PC1) | Sputter-System(Lesker) | ALD Picosun 200 | |
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Generel description |
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Stoichiometry and form |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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ALD1: ALD2: | |
Substrate size |
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ALD1:
ALD2:
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Allowed materials |
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