Specific Process Knowledge/Thin film deposition: Difference between revisions

From LabAdviser
Eves (talk | contribs)
Reet (talk | contribs)
 
(One intermediate revision by the same user not shown)
Line 21: Line 21:
[[/Deposition of Silicon|Silicon]] <br/>
[[/Deposition of Silicon|Silicon]] <br/>
[[/Deposition of Germanium|Germanium]] <br/>
[[/Deposition of Germanium|Germanium]] <br/>
[[/DiamondCVD|Diamond]] <br/>


|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
Line 144: Line 143:
|style="background: LightGray"|
|style="background: LightGray"|
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/PECVD|PECVD]] - ''Plasma Enhanced Chemical Vapor deposition''
*[[/DiamondCVD|Seki Diamond CVD]] - ''Microwave Plasma CVD for diamond Growth''
<!--*[[/DiamondCVD|Seki Diamond CVD]] - ''Microwave Plasma CVD for diamond Growth''-->
|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
*[[/ALD Picosun R200|ALD1]] - Atomic Layer Deposition (thermal)
*[[/ALD Picosun R200|ALD1]] - Atomic Layer Deposition (thermal)

Latest revision as of 09:43, 29 August 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Choose material to deposit

Semiconductors Oxides Nitrides Carbon and Carbides Metals Alloys Transparent conductive oxides Polymers Multilayers

Silicon
Germanium

Aluminium Oxide (Al2O3)
Barium titanate (BaTiO3)
Chromium Oxide (Cr2O3)
Hafnium Oxide (HfO2)
Magnesium Oxide (MgO)
Nickel Oxide (NiO)
Silicon Oxide (SiO2)
Titanium Oxide (TiO2)
Tantalum Oxide (Ta2O5)
Vanadium Oxide (VOx)
Zinc Oxide (ZnO)


Silicon Nitride - and oxynitride
Titanium Nitride - conductive ceramics
Niobium Titanium Nitride - superconductors
Aluminum Nitride (AlxNy)
Scandium Nitride (ScxNy)


Carbon
Silicon Carbide (SiC)
Tantalum carbide (TaCx)


Aluminium
Chromium
Copper
Gold
Iron
Magnesium
Molybdenum
Nickel
Niobium
Palladium
Platinum
Ruthenium
Silver
Tantalum
Tin
Titanium
Tungsten
Zinc
Scandium


AlCu
CuTi
FeMn
MnIr
NbTi
NiFe
NiV alloy
TiW alloy (10%/90% by weight)

And an electroceramic:

YSZ (Yttrium stabilized zirconia)
Gd0.2Ce0.8O2 (GCO)

ITO (Tin doped Indium Oxide)
AZO (Aluminum doped Zinc Oxide)

SU-8
Antistiction coating
Topas
PMMA

CrSi bilayer

Oh no! My material is not on the list! Please contact the Thin Film group if you would like to inquire about a material that is not mentioned here.

Choose deposition equipment

PVD - Physical vapor deposition LPCVD - low pressure chemical vapor deposition PECVD - plasma enhanced chemical vapor deposition ALD - atomic layer deposition Coaters - for polymers Others



  • PECVD - Plasma Enhanced Chemical Vapor deposition
  • ALD1 - Atomic Layer Deposition (thermal)
  • ALD2 (PEALD) - Atomic Layer Deposition (thermal and plasma enhanced)

See the Lithography/Coaters page for coating polymers

  • MVD - Molecular Vapor Deposition
  • Electroplating of Ni, Cu, Au, etc. - Ask in the department of Mechanical Engineering
  • MOCVD - Epitaxial growth of InP, GaAs and other III-V materials - Ask DTU Electro if you are interested: Elizaveta Semenova or Kresten Yvind