Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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<!--Page reviewed by jmli 1/8-2016  -->
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==Etching of Aluminium==
==Etching of Aluminium==
Etching of aluminium is done wet at Danchip. We have two different solutions:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 at 50 <sup>o</sup>C
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Al]]
<br clear="all" />
 
==Comparison of Aluminium Etch Methods==
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-


{| border="1" cellspacing="0" cellpadding="4" align="center"
|-
!  
|-style="background:WhiteSmoke; color:black"
! Aluminium Etch 1
!Generel description
! Aluminium Etch 2
|Wet etch of Al
|-  
|Wet etch/removal: TMAH<br>
|General description
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
 
|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
|
*Etch of pure aluminium
*~60-100nm/min
|
|
*Etch of aluminium + 1.5% Si
*~30nm/min (pure Al)
|
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
 
|-
|-
|Possible masking materials:
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
*Photoresist
*Isotropic
*Silicon nitride
|
|
*Photoresist
*Isotropic
*(Poly)Silicon
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
|
|
*Photoresist
*Anisotropic (vertical sidewalls)
*(Poly)Silicon
*Aluminium
|-
|Etch rate
|
|
~70-90 nm/min (Thermal oxide)
*Anisotropic (angles sidewalls, typical around 70 dg)
|
|-
*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. 
 
 
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
|
*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
*100 mm wafers (in bath)
|-
*150 mm wafers (in bath)
|Batch size
*Any size (in beaker)
|
|
*1-25 wafers at a time
*Chips (6-60 mm)
*100 mm wafers
*150 mm wafers
|
|
*1 wafer at a time
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
|
*1 wafer at a time
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|Size of substrate
 
|
*4" wafers
|
*4" wafers or smaller pieces
|
*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)
|-
|-
|Allowed materials
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
|
*Silicon
*Every thing that is allowed in the Developer: TMAH Manual
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*Blue film
*Gold (Au) and Nickel (Ni) (but only in BHF2 (KOH)!)
|
|
*Silicon
*Silicon
*Silicon Oxide
*Quartz/fused silica
*Silicon Nitride
*Photoresist/e-beam resist
*Silicon Oxynitride
*PolySilicon,
*Photoresist
*Silicon oxide
*E-beam resist
*Silicon (oxy)nitride
*Aluminium
*Aluminium
*Chromium (ONLY RIE2!)
*Titanium
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
*Chromium
|
|
*Silicon
*Silicon  
*Silicon Oxide
*Silicon oxides
*Silicon Nitride
*Silicon nitrides
*Silicon Oxynitride
*Metals from the +list
*Photoresist
*Metals from the -list
*E-beam resist
*Alloys from the above list
*Aluminium
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 09:48, 31 May 2024

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Aluminium Etch Methods

Aluminium Etch Developer TMAH manual ICP metal IBE (Ionfab300+)
Generel description Wet etch of Al Wet etch/removal: TMAH

Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow here

Dry plasma etch of Al Sputtering of Al - pure physical etch.
Etch rate range
  • ~60-100nm/min
  • ~30nm/min (pure Al)
  • ~350 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • 100 mm wafers (in bath)
  • 150 mm wafers (in bath)
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials In 'Aluminium Etch' bath:

In beaker:

  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual
  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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