Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!--Process time--> 2:30 | |<!--Process time--> 2:30 | ||
|<!--'''Date'''--> 29/02/2024 | |<!--'''Date'''--> 29/02/2024 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:Si3N4_pat1_chf3t1-_250.tif|300px]] [[File:Si3N4_pat1_chf3t1-_500.tif|300px]] [[File:Si3N4_pat1_chf3t1-_1000.tif|300px]] [[File:Si3N4_pat1_chf3t1-_3000.tif|400px]] | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Etch rate in SiO2'''--> nm/min <br> +/- % | |<!--'''Etch rate in SiO2'''--> nm/min <br> +/- % |
Revision as of 15:50, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests
Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Redeposition - top view | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
---|---|---|---|---|---|---|---|---|
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
2:30 | 29/02/2024 | File:Si3N4 pat1 chf3t1- 250.tif File:Si3N4 pat1 chf3t1- 500.tif File:Si3N4 pat1 chf3t1- 1000.tif File:Si3N4 pat1 chf3t1- 3000.tif | nm/min +/- % |
nm/min +/- % |
||
CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 12/09/2023 | nm/min +/- % |
nm/min +/- % |
|||
CF4lowCP | CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 29/02/2024 | nm/min +/- % |
nm/min +/- % |
|||