Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/Dope with Boron|Doping with Boron]] | *[[/Dope with Boron|Doping with Boron]] | ||
*[[/Dope with Phosphorus|Doping with Phosphorus]] | *[[/Dope with Phosphorus|Doping with Phosphorus]] | ||
*[[/Pyrolysis| | *[[/Pyrolysis|Resist pyrolysis]] | ||
== Choose an equipment to use == | == Choose an equipment to use == | ||
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'''Other furnaces:''' | '''Other furnaces:''' | ||
*[[/ | *[[/Resist Pyrolysis furnace |Resist Pyrolysis (former Multipurpose Anneal) furnace]] - ''For mainly resist pyrolysis'' | ||
*[[/RTP Jipelec 2|RTP2 Jipelec]] - ''For rapid thermal annealing of III-V materials, Si-based materials and some metals'' | *[[/RTP Jipelec 2|RTP2 Jipelec]] - ''For rapid thermal annealing of III-V materials, Si-based materials and some metals'' | ||
*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing, rapid thermal oxidation and smoothing of Si-based materials.'' | *[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing, rapid thermal oxidation and smoothing of Si-based materials.'' | ||
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*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | *[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | ||
*[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist | *[[/Resist Pyrolysis Furnace|Old Resist Pyrolysis furnace]] - ''For pyrolysis of different resist | ||
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | *[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | ||
Latest revision as of 13:57, 26 February 2024
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Choose a process type
- Oxidation - Grow a thermal oxide on silicon
- Annealing
- Doping with Boron
- Doping with Phosphorus
- Resist pyrolysis
Choose an equipment to use
A stack furnaces:
- Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
- Gate Oxide furnace (A2) - Not in use
- Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers
C stack furnaces:
- Anneal-oxide furnace (C1) - For oxidation and annealing of 100 mm and 150 mm wafers
- III-V oxidation furnace (C2) - For oxidation of AlxGaAs layers.
- Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
- Aluminium Anneal furnace (C4) - For annealing and oxidation of wafers containing e.g. aluminium, Al2O3 and TiO2
E stack furnaces:
- Oxidation (8") furnace (E1) - For oxidation and annealing of 150 mm and 200 mm wafers
Other furnaces:
- Resist Pyrolysis (former Multipurpose Anneal) furnace - For mainly resist pyrolysis
- RTP2 Jipelec - For rapid thermal annealing of III-V materials, Si-based materials and some metals
- RTP Annealsys - For rapid thermal annealing, rapid thermal oxidation and smoothing of Si-based materials.
- BCB Curing oven - For resist curing and metal alloyinglayers
Rules for storage and RCA cleaning of wafers to the A and C stack furnaces
Manual for the furnace computer to the A, B, C and E stack furnaces
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in LabManager (login required):
Decommissioned equipment
- RTP Jipelec - For rapid thermal annealing of III-V materials and Si-based materials
- APOX furnace - For growing of very thick oxide layers
- III-V Oven (D4) - For oxidation of AlxGaAs layers.
- Old Resist Pyrolysis furnace - For pyrolysis of different resist
- Noble furnace - For annealing and oxidation of non-clean wafers