Specific Process Knowledge/Characterization/XRD: Difference between revisions

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== XRD SmartLab ==
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


The Rigaku SmartLab is an advanced XRD for measuring on thin films. All thin films can be measured without fixating the sample, as the system has a so called In-Plane arm.


[[image:Cluster1.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]]
=XRD at DTU Nanolab=
We have two X-ray diffraction setups in building 346:
*The [[/XRD_SmartLab|XRD SmartLab]] primarily for thin film analysis inside the cleanroom.
*The [[/XRD_Powder|XRD Powder]] for phase analysis of powders outside the cleanroom.


==Experiments performed with XRD==
*[[/Process Info|List and description of possible XRD measurements with typical setup requirements]] Note mostly relevant for XRD Smartlab


'''The user manual(s), user APV(s), technical information, and contact information can be found in LabManager:'''
==Data analysis==
For data analysis, we recommend using Rigaku SmartLab Studio for both thinfilms and basic powder analysis.
If more advanced powder analysis is needed we provide access to a remote desktop with a licence for the excellent Malvern Panalytical software, HighScore.


[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=428  XRD SmartLab in LabManager]
*[[/software|Installing SmartLab Studio II]]
*[[/dataconversion|Converting data from XRD Powder to SmartLab Studio II]]
*[[/SLSII_analysis|Guide for using SmartLab Studio II for data analysis]]
*[[/HighScore_analysis|Guide for using HighScore Plus for advanced powder data analysis]]


== Process information ==
Apart from this commercial software a wide range of free software is available online for data analysis. [https://xrd.mit.edu/xrd-software Here are some suggestions from MIT].


Link to process pages - e.g. one page for each material
==Comparison of the XRDs at Nanolab==
 
Example:
*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of silicon oxide using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of silicon nitride using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of photo resist using RIE]]
 
==Equipment performance and process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>XRD SmartLab</b>
|style="background:WhiteSmoke; color:black"|<b>XRD Powder</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"| Crystal structure analysis
 
and thin film thickness measurement
|style="background:WhiteSmoke; color:black"|
*Phase ID
*Crystal Size
*Crystallinity
*Quality and degree of orientation
*3D orientation
*Latice strain
*Composition
*Twist
*3D lattice constant
*Thickness
*Roughness
*Density
|style="background:WhiteSmoke; color:black"|
*Phase ID
*Crystal Size
*Crystallinity
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="6"|X-ray generator
|style="background:LightGrey; color:black"|
Maximum rated output
|style="background:WhiteSmoke; color:black"|
3 kW
|style="background:WhiteSmoke; color:black"|
600 W
|-
|style="background:LightGrey; color:black"|
Rated tube voltage
|style="background:WhiteSmoke; color:black"|
20 to 45 kV
|style="background:WhiteSmoke; color:black"|
40 kV
|-
|style="background:LightGrey; color:black"|
Rated tube current
|style="background:WhiteSmoke; color:black"|
2 to 60 mA
|style="background:WhiteSmoke; color:black"|
15 mA
|-
|style="background:LightGrey; color:black"|
Type
|style="background:WhiteSmoke; color:black"|
Sealed tube
|style="background:WhiteSmoke; color:black"|
Sealed tube
|-
|style="background:LightGrey; color:black"|
Target
|style="background:WhiteSmoke; color:black"|
Cu
|style="background:WhiteSmoke; color:black"|
Cu
|-
|style="background:LightGrey; color:black"|
Focus size
|style="background:WhiteSmoke; color:black"|
0.4 mm x 8 mm (Line/Point)
|style="background:WhiteSmoke; color:black"|
0.4 mm x 12 mm (Line)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Goniometer
|style="background:LightGrey; color:black"|
Scanning mode
|style="background:WhiteSmoke; color:black"|
incident / receiver coupled or independent
|style="background:WhiteSmoke; color:black"|
incident / receiver coupled
|-
|style="background:LightGrey; color:black"|
Goniomenter radius
|style="background:WhiteSmoke; color:black"|
300 mm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
145 mm
*Purpose 2
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
Response 1
Minimum step size
|style="background:WhiteSmoke; color:black"|
0.0001° (0.36")
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
0.001° (3.6")
*Performance range 2
|-
|-
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
Response 2
Sample stage motion
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
*&chi;:-5~+95°
*&phi;:0~360°
*Z:-4~+1 mm
*X,Y:&plusmn;50 mm for a 100 mm wafer
*Rx,Ry:-5~+5°
|style="background:WhiteSmoke; color:black"|
Fixed with rotation
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Optics
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Incident side
|style="background:WhiteSmoke; color:black"|
*Cross Beam Optics(CBO)
*Ge(220)x2 monochromator
*In-Plane Parallel Slit Collimator (PSC)
*Soller slit
*Automatic variable divergence slit
*Length limiting slits
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*0.04° soller slit
*Ni and Cu filter
*Divergence slits
*Beam masks
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Receiver side
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*Automatic variable scattering slit
*Automatic variable receiver slit
*Parallel slit analysers (PSA)
*Ge(220)x2 analyser
|style="background:WhiteSmoke; color:black"|
*0.04° soller slit
*Ni filter
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Measurement temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|style="background:WhiteSmoke; color:black"|
May be heated in N<sub><sub>2</sub></sub> up to 500°C
|-
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
up to 150 mm wafers
 
Thickness max 21 mm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
Only for powders
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
All materials approved in the cleanroom.
*Allowed material 2
 
No powders or dusty materials.
|style="background:WhiteSmoke; color:black"|
All materials have to be approved
|-  
|-  
|}
|}


<br clear="all" />
<br clear="all" />

Latest revision as of 17:10, 18 December 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


XRD at DTU Nanolab

We have two X-ray diffraction setups in building 346:

  • The XRD SmartLab primarily for thin film analysis inside the cleanroom.
  • The XRD Powder for phase analysis of powders outside the cleanroom.

Experiments performed with XRD

Data analysis

For data analysis, we recommend using Rigaku SmartLab Studio for both thinfilms and basic powder analysis. If more advanced powder analysis is needed we provide access to a remote desktop with a licence for the excellent Malvern Panalytical software, HighScore.

Apart from this commercial software a wide range of free software is available online for data analysis. Here are some suggestions from MIT.

Comparison of the XRDs at Nanolab

Equipment XRD SmartLab XRD Powder
Purpose Crystal structure analysis

and thin film thickness measurement

  • Phase ID
  • Crystal Size
  • Crystallinity
  • Quality and degree of orientation
  • 3D orientation
  • Latice strain
  • Composition
  • Twist
  • 3D lattice constant
  • Thickness
  • Roughness
  • Density
  • Phase ID
  • Crystal Size
  • Crystallinity
X-ray generator

Maximum rated output

3 kW

600 W

Rated tube voltage

20 to 45 kV

40 kV

Rated tube current

2 to 60 mA

15 mA

Type

Sealed tube

Sealed tube

Target

Cu

Cu

Focus size

0.4 mm x 8 mm (Line/Point)

0.4 mm x 12 mm (Line)

Goniometer

Scanning mode

incident / receiver coupled or independent

incident / receiver coupled

Goniomenter radius

300 mm

145 mm

Minimum step size

0.0001° (0.36")

0.001° (3.6")

Sample stage motion

  • χ:-5~+95°
  • φ:0~360°
  • Z:-4~+1 mm
  • X,Y:±50 mm for a 100 mm wafer
  • Rx,Ry:-5~+5°

Fixed with rotation

Optics Incident side
  • Cross Beam Optics(CBO)
  • Ge(220)x2 monochromator
  • In-Plane Parallel Slit Collimator (PSC)
  • Soller slit
  • Automatic variable divergence slit
  • Length limiting slits
  • 0.04° soller slit
  • Ni and Cu filter
  • Divergence slits
  • Beam masks
Receiver side
  • Automatic variable scattering slit
  • Automatic variable receiver slit
  • Parallel slit analysers (PSA)
  • Ge(220)x2 analyser
  • 0.04° soller slit
  • Ni filter
Substrates Measurement temperature

Room temperature

May be heated in N2 up to 500°C

Substrate size

up to 150 mm wafers

Thickness max 21 mm

Only for powders

Allowed materials

All materials approved in the cleanroom.

No powders or dusty materials.

All materials have to be approved


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