Specific Process Knowledge/Thin film deposition/Wordentec: Difference between revisions

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'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Wordentec&action=edit click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Wordentec click here]'''  


[[Category: Equipment]]
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
[[Category: Thin Film Deposition]]
 
[[Category: Equipment|Thin film Wordentec]]
[[Category: Thin Film Deposition|Wordentec]]




==Wordentec QCL 800==
==Wordentec QCL 800==
[[Image:Wordentec.jpg|300x300px|thumb|Wordendec: positioned in cleanroom D-2 in the Wordentec room]]
[[Image:Wordentec.jpg|300x300px|thumb|Wordentec: positioned in cleanroom D-2 in the Wordentec room]]


The Wordentec is a machine for:
The Wordentec is a machine for:
*Deposition of metal through E-beam deposition
*Deposition of metals by e-beam evaporation
*Deposition of metal through thermal evaporation
*Deposition of metals by thermal evaporation
*Deposition of materials through DC sputtering
*Deposition of materials by DC sputtering
*Cleaning of samples before deposition through Argon RF sputter clean
*Cleaning samples before deposition by Argon RF sputter cleaning
The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter.
 
Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate.  
The Wordentec is designed to deposit on 1-6 samples in sequence.
The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.
Adaptors exist for deposition on 2", 4" and 6" wafers and deposition is possible on samples of almost any size and shape, as long as they do not exceed a 6" diameter.  
The Wordentec supports either single sample deposition for running a separate recipe on each sample or batch deposition for six wafers in sequence. It is possible to freely combine processes from the machine's different sources.




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|-
|-
|}
|}
[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Gold#Studies_of_Au_deposition_processes_in_the_Wordentec| Temperature and roughness studies of Au deposition processes in the Wordentec]
E-beam evaporation of some materials like Au and Al can affect the underlying layers and thin resists such as E-beam sensitive resists can get exposed or their topography may change. Cases of releasing bubbles of the solvent will create a crater-like surface on some materials. In most cases this only affects the areas containing resist, hence liftoff is often easier and the areas without resist will have good adhesion.
[[Media:WaferAfterWordentec.JPG|Delaminating Au film on thin E-beam resist]]


===Thermal evaporation materials===
===Thermal evaporation materials===
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It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC
It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC
sputtering. The materials available currently are:
sputtering. The materials available currently include:


*[[Specific Process Knowledge/Thin film deposition/Deposition of TiW|TiW]] alloy (10%/90% by weight)
*[[Specific Process Knowledge/Thin film deposition/Deposition of TiW|TiW]] alloy (10%/90% by weight)
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*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium|Titanium (Ti)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium|Titanium (Ti)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon|Silicon (Si)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon|Silicon (Si)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of NiV/Sputtering of NiV in Wordentec|NiV alloy]]




More information about deposition rates and surface roughness can be found by clicking on the different elements.
More information about deposition rates and surface roughness can be found by clicking on the different elements.


==Equipment performance and  and process related parameters Wordentec==
===Thickness measurement===
Read about how the machine measures the thickness of the growing film using a quartz crystal monitor [[Specific_Process_Knowledge/Thin_film_deposition/Temescal/Good to know about the Temescal#Deposition rate and thickness measurement accuracy|'''here''']].
 
===Particulates in the films===
Read about some tests that we made of particulates in e-beam evaporated Al, Ni, and TiAu films made in the Wordentec and the Temescal
[[Specific_Process_Knowledge/Thin_film_deposition/Temescal/Particulates in Temescal Au films|'''here''']].
 
==Equipment performance and process related parameters Wordentec==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
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*Thermal evaporation
*Thermal evaporation
|-
|-
!style="background:silver; color:black" align="left" rowspan="2" valign="top" |Performance
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~2.5Å/s - 15Å/s
*~2.5Å/s - 15Å/s
|-
|style="background:LightGrey; color:black"|Thickness uniformity
|style="background:WhiteSmoke; color:black"|
*~6 % variation across a 4" wafer for thermal evaporation of 100 nm Al **
*~9 % variation across a 4" wafer for e-beam evaporation of 100 nm Ni **
*~6 % variation across a 4" wafer for e-beam evaporation of 10 nm Ti + 90 nm Au **
|-
|-
!style="background:silver; color:black" align="left" rowspan= "2" valign="top" |Process parameter range
!style="background:silver; color:black" align="left" rowspan= "2" valign="top" |Process parameter range
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|}
|}


'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For e-beam evaporation and sputtering, permission is required for thicknesses above 600 nm. For thermal evaporation, permission is required for thicknesses above 120 nm. This is to ensure that there will be enough material present. Contact metal@nanolab.dtu.dk or thinfilm@nanolab.dtu.dk''
 
== Quality control (QC) for Wordentec==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for Wordentec'''
|-
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1404&mach=167 QC procedure for Wordentec]<br>
*[http://labmanager.danchip.dtu.dk/view_binary.php?fileId=2109 The newest QC data for Wordentec]<br>


{| {{table}}
'''**''' ''Percent variation calculated as (Max-Min)/Average. For thermally evaporated Al, the max was on one side of the wafer rather than in the middle. Measured by Rebecca Ettlinger, Nov. 2018.''
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:240px"
 
! QC Recipe:
! Au
! Ni
|-
|Deposition rate
|10 Å/s
|10 Å/s
|-
|Thickness
|1000 Å
|1000 Å
|-
|Pressure
|Below 2*10<sup>-6</sup> mbar
|Below 2*10<sup>-6</sup> mbar
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
!QC limits
!Wordentec
|-
|Measured average thickness (Å)
|900-1100 Å
|-
|Lowest accepted deposition rate (Å/s)
|6 Å/s
|-
|}
|-
|}
Thicknesses are measured in 5 points with one of the Dektak instruments.
|}

Latest revision as of 10:35, 11 May 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Wordentec QCL 800

Wordentec: positioned in cleanroom D-2 in the Wordentec room

The Wordentec is a machine for:

  • Deposition of metals by e-beam evaporation
  • Deposition of metals by thermal evaporation
  • Deposition of materials by DC sputtering
  • Cleaning samples before deposition by Argon RF sputter cleaning

The Wordentec is designed to deposit on 1-6 samples in sequence. Adaptors exist for deposition on 2", 4" and 6" wafers and deposition is possible on samples of almost any size and shape, as long as they do not exceed a 6" diameter. The Wordentec supports either single sample deposition for running a separate recipe on each sample or batch deposition for six wafers in sequence. It is possible to freely combine processes from the machine's different sources.


The user manual, quality control procedure and results, user APV, technical information and contact information can be found in LabManager:

Wordentec in LabManager

Process information

The metals available for E-beam evaporation and their standard deposition rates are:

Metal Deposition rate [Å/s]
Titanium (Ti) 10
Chromium (Cr) 10
Aluminium (Al) 10
Nickel (Ni) 10
Platinum (Pt) 10
Gold (Au) 10

Temperature and roughness studies of Au deposition processes in the Wordentec


E-beam evaporation of some materials like Au and Al can affect the underlying layers and thin resists such as E-beam sensitive resists can get exposed or their topography may change. Cases of releasing bubbles of the solvent will create a crater-like surface on some materials. In most cases this only affects the areas containing resist, hence liftoff is often easier and the areas without resist will have good adhesion.

Delaminating Au film on thin E-beam resist

Thermal evaporation materials

We currently have Aluminium, Silver and Germanium available to deposit through thermal evaporation.

Sputter materials

It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently include:


More information about deposition rates and surface roughness can be found by clicking on the different elements.

Thickness measurement

Read about how the machine measures the thickness of the growing film using a quartz crystal monitor here.

Particulates in the films

Read about some tests that we made of particulates in e-beam evaporated Al, Ni, and TiAu films made in the Wordentec and the Temescal here.

Equipment performance and process related parameters Wordentec

Purpose Deposition of metals
  • E-beam evaporation
  • Sputtering
  • Thermal evaporation
Performance Film thickness
  • ~10Å - 1µm*
Deposition rate
  • ~2.5Å/s - 15Å/s
Thickness uniformity
  • ~6 % variation across a 4" wafer for thermal evaporation of 100 nm Al **
  • ~9 % variation across a 4" wafer for e-beam evaporation of 100 nm Ni **
  • ~6 % variation across a 4" wafer for e-beam evaporation of 10 nm Ti + 90 nm Au **
Process parameter range Process Temperature
  • Less than 80 oC
Process pressure
  • ~3x10-7 - 4x10-6 mbar
Substrates Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals

* For e-beam evaporation and sputtering, permission is required for thicknesses above 600 nm. For thermal evaporation, permission is required for thicknesses above 120 nm. This is to ensure that there will be enough material present. Contact metal@nanolab.dtu.dk or thinfilm@nanolab.dtu.dk

** Percent variation calculated as (Max-Min)/Average. For thermally evaporated Al, the max was on one side of the wafer rather than in the middle. Measured by Rebecca Ettlinger, Nov. 2018.

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