Specific Process Knowledge/Lithography/Baking: Difference between revisions

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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Baking click here]'''
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Baking click here]'''
 
[[Category: Equipment|baking]]
[[Category: Lithography|Baking]]
 
__TOC__
 
=Comparing baking methods=
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
!
![[Specific_Process_Knowledge/Lithography/Baking#Small benchtop hotplates|Spray coater hotplate]]
![[Specific_Process_Knowledge/Lithography/Baking#SU-8 hotplates 1, 2 & 3| SU-8 hotplates 1, 2 & 3]]
![[Specific Process Knowledge/Lithography/Baking#Small_benchtop_hotplates|Small benchtop hotplates]]
![[Specific Process Knowledge/Lithography/Baking#Gamma_hotplates|Gamma hotplates]]
![[Specific_Process_Knowledge/Lithography/Baking#Oven: 110C - 250C|Oven: 110C - 250C]]
![[Specific Process Knowledge/Lithography/Baking#Oven_250C|Oven 250C]]
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Purpose
|
Adjustable temperature, contact bake
*Soft bake
*PEB
*Hard bake
|
Programmable, ramped contact bake
*Soft bake of SU-8
*PEB of SU-8
|
Hotplate: 90-110C:<br />
Programmable, contact bake
*Soft bake
*PEB
 
 
Labspin hotplates:<br />
Adjustable temperature, contact bake
*Soft bake
*PEB
*Hard bake
|
Recipe dependent temperature, contact or proximity bake
*Soft bake
*PEB
*Hard bake
|
Manual convection bake
*Hard bake
*Post-exposure bake
|
Manual convection bake
*Dehydration
*'''NO resist!'''
|-
 
|-
|-style="background:LightGrey; color:black"
!Temperature
|
Maximum 180°C
 
Temperature with top-plate: Actual surface temperature = 0.9 * display value
|
Maximum 110°C
|
Hotplate: 90-110C:<br />
*Maximum 120°C
*Return to 90°C after use
 
 
Labspin hotplates:<br />
*Maximum temperature is hotplate dependent
*Temperature with top-plate: Actual surface temperature = 0.9 * display value
|
Fixed at various recipe dependent temperatures
|
110 - 250°C
 
Return to 110°C after use
|
Fixed at 250°C
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Substrate size
|
* Pieces
* 50 mm wafer
* 100 mm wafer
* 150 mm wafer
* 200 mm wafer
|
* pieces
* 50 mm wafers
* 100 mm wafers
* 150 mm wafer
* 200 mm wafer
|
* pieces (only Labspin hotplates)
* 50 mm wafers
* 100 mm wafers
* 150 mm wafer
* 200 mm wafer
|
* 100 mm wafers
* 150 mm wafers
|
* 100 mm wafers
* 150 mm wafers
|
* 100 mm wafers
* 150 mm wafers
|-
 
|-style="background:LightGrey; color:black"
!Allowed materials
|
All substrates
 
Film or pattern of all types
|
Silicon, glass, and polymer substrates
 
Film or pattern of all types except type IV
|
Hotplate dependent.
 
(All substrates and film or pattern of all types, unless otherwise noted on the hotplate)
|
Silicon and glass substrates
|
Silicon, glass, and high Tg polymer substrates
 
Film or pattern of all types
|
Silicon, glass, and high Tg polymer substrates
 
Film or pattern of all types except resist|
|-
 
 
|-style="background:WhiteSmoke; color:black"
!Restrictions <br> (Not allowed)
|
|III-V, copper, steel substrates
 
Pb, Te films
|
Hotplate dependent. Any restrictions will be noted on the hotplate.
|
|III-V, low Tg polymer, copper, steel substrates
|III-V, low Tg polymer, copper, steel substrates
 
Resist is not allowed
|-
 
 
|-style="background:WhiteSmoke; color:black"
|- valign="top"
!QC<br>'''- requires login'''
|
https://labmanager.dtu.dk/view_binary.php?type=data&mach=293
 
|
Hotplate 1:<br /> https://labmanager.dtu.dk/view_binary.php?type=data&mach=122
 
Hotplate 2:<br /> https://labmanager.dtu.dk/view_binary.php?type=data&mach=124
 
Hotplate 3:<br /> https://labmanager.dtu.dk/view_binary.php?type=data&mach=453
 
|
Hotplate: 90-110C:<br /> https://labmanager.dtu.dk/view_binary.php?type=data&mach=336
 
Spin coater: Labspin 02:<br />https://labmanager.dtu.dk/view_binary.php?type=data&mach=362
 
Spin coater: Labspin 03:<br />https://labmanager.dtu.dk/view_binary.php?type=data&mach=387
 
|
Spincoater: Gamma ebeam & UV:<br />  http://labmanager.dtu.dk/view_binary.php?fileId=4431
 
Spincoater: Gamma UV:<br />  http://labmanager.dtu.dk/view_binary.php?fileId=4432
 
Developer: TMAH UV-lithography:<br /> http://labmanager.dtu.dk/view_binary.php?fileId=4434
 
Spincoater: Süss stepper:<br /> http://labmanager.dtu.dk/view_binary.php?fileId=4433
 
Developer: Stepper:<br /> http://labmanager.dtu.dk/view_binary.php?fileId=4435
 
 
|
 
|
 
|-
|}


= Hotplates =


==90 C 4" hotplate== 
[[Image:Hotplates.jpg|300x300px|thumb|Right: Hotplate 90 °C situated in C-1]]
This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist.
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==110 C 4" hotplate==
= Hotplates =
[[Image:Hotplates.jpg|300x300px|thumb|Left: Hotplate 110 °C situated in C-1]]
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec.
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==Hotplate: 90-110C==   
==Hotplate: 90-110C==   
[[Image:Hotplates.jpg|300x300px|thumb|Location of Hotplate: 90-110C in C-1]]
[[Image:Hotplate90-110C in C-1.jpg|300x300px|thumb|Hotplate: 90-110C located in C-1]]
Hotplate: 90-110C is used for baking of 2" - 6" wafers.
Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.
 
 
The user manual, and contact information can be found in LabManager:


'''The user manual, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=336 Hotplate: 90-110C]'''
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=336 Hotplate: 90-110C] - '''requires login'''


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==SU8 hotplates==
==SU-8 hotplates 1, 2 & 3==
[[Image:SU-8hotplates.jpg|300x300px|thumb|Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1]]
[[Image:SU-8hotplates.jpg|300x300px|thumb|Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1]]
We have two dedicated SU-8 hotplates in C-1.
We have three dedicated SU-8 hotplates in C-1 and E-4.


Users can control the ramp-time, the baking temperature, and the baking time.
Users can control the ramp-time, the baking temperature, and the baking time.
In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 180°C.
The user manual, and contact information can be found in LabManager:
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=122 Hotplate 1 (SU8)] - '''requires login'''
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=124 Hotplate 2 (SU8)] - '''requires login'''


'''The user manual, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=122 Hotplate 1 (SU8)] [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=124 Hotplate 2 (SU8)]'''
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=453 Hotplate 3 (SU8)] - '''requires login'''
<br clear="all" />
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= Ovens =
==Small benchtop hotplates== 
Model: Präzitherm PZ 28-2.
 
Contact bake only. Maximum temperature is hotplate dependent.
 
Most of these hotplates have been fitted with a top-plate in order to protect the original hotplate surface. With the top-plate, the set point of the controller must be adjusted in order to achieve the correct temperature during the bake:
 
'''Actual surface temperature = 0.9 * display value'''
 
<div align="right">
<gallery widths="320px" heights="240px">
File:Benchtop C1.jpg|Benchtop hotplate for Spray coater located in C-1
File:Labspin_2.JPG|Benchtop hotplates for Labspins in E-5
</gallery>
</div>


==90 C oven==
[[Image:Oven_90_degrees_cr3.jpg|300x300px|thumb|Oven 90 °C: positioned in C-1]]
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
<br clear="all" />
<br clear="all" />


==120 C oven==
==Gamma hotplates==
[[Image:Oven_120_degrees_cr3.jpg|300x300px|thumb|Oven 120 °C: positioned in C-1]]
[[Image:HMDS gammaUV.jpg|300x300px|thumb|Hotplate modules in Spin Coater: Gamma UV.]]
120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.
Hotplate temperatures are recipe dependent.
 
'''Information about the Süss MicroTec Gamma tools can be found in labadviser:'''
*[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV Spin Coater: Gamma UV]
*[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV Spin Coater: Gamma e-beam & UV]
*[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography Developer TMAH UV-lithography]
*[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper Spin Coater: Süss Stepper]
*[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper Developer: TMAH Stepper]
 
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==250 C oven for pretreatment==
= Ovens =
[[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250 °C for pretreatment: positioned in C-1]]
 
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap.
==Oven: 110C - 250C==
[[Image:Oven120C-250C in C-1.jpg|300x300px|thumb|Oven: 110C - 250C situated in C-1]]
Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.
 
The set-point can be varied, but should always be returned to 110°C after use.
 
 
The user manual, and contact information can be found in LabManager:
 
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=119 Oven: 110C - 250C] - '''requires login'''
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==250 C oven for burning resist==
{{:Specific Process Knowledge/Lithography/Pretreatment/Oven_250C}}
[[Image:Oven_250_degrees_for_burning_resist_cr3.jpg|300x300px|thumb|Oven 250 °C for burning resist: positioned in C-1]]
This oven is used for "burning" the resist, therefore not considered clean.
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Latest revision as of 13:50, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

Comparing baking methods

Spray coater hotplate SU-8 hotplates 1, 2 & 3 Small benchtop hotplates Gamma hotplates Oven: 110C - 250C Oven 250C
Purpose

Adjustable temperature, contact bake

  • Soft bake
  • PEB
  • Hard bake

Programmable, ramped contact bake

  • Soft bake of SU-8
  • PEB of SU-8

Hotplate: 90-110C:
Programmable, contact bake

  • Soft bake
  • PEB


Labspin hotplates:
Adjustable temperature, contact bake

  • Soft bake
  • PEB
  • Hard bake

Recipe dependent temperature, contact or proximity bake

  • Soft bake
  • PEB
  • Hard bake

Manual convection bake

  • Hard bake
  • Post-exposure bake

Manual convection bake

  • Dehydration
  • NO resist!
Temperature

Maximum 180°C

Temperature with top-plate: Actual surface temperature = 0.9 * display value

Maximum 110°C

Hotplate: 90-110C:

  • Maximum 120°C
  • Return to 90°C after use


Labspin hotplates:

  • Maximum temperature is hotplate dependent
  • Temperature with top-plate: Actual surface temperature = 0.9 * display value

Fixed at various recipe dependent temperatures

110 - 250°C

Return to 110°C after use

Fixed at 250°C

Substrate size
  • Pieces
  • 50 mm wafer
  • 100 mm wafer
  • 150 mm wafer
  • 200 mm wafer
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • 200 mm wafer
  • pieces (only Labspin hotplates)
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • 200 mm wafer
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types except type IV

Hotplate dependent.

(All substrates and film or pattern of all types, unless otherwise noted on the hotplate)

Silicon and glass substrates

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types except resist|

Restrictions
(Not allowed)
III-V, copper, steel substrates

Pb, Te films

Hotplate dependent. Any restrictions will be noted on the hotplate.

III-V, low Tg polymer, copper, steel substrates III-V, low Tg polymer, copper, steel substrates

Resist is not allowed

QC
- requires login

https://labmanager.dtu.dk/view_binary.php?type=data&mach=293

Hotplate 1:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=122

Hotplate 2:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=124

Hotplate 3:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=453

Hotplate: 90-110C:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=336

Spin coater: Labspin 02:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=362

Spin coater: Labspin 03:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=387

Spincoater: Gamma ebeam & UV:
http://labmanager.dtu.dk/view_binary.php?fileId=4431

Spincoater: Gamma UV:
http://labmanager.dtu.dk/view_binary.php?fileId=4432

Developer: TMAH UV-lithography:
http://labmanager.dtu.dk/view_binary.php?fileId=4434

Spincoater: Süss stepper:
http://labmanager.dtu.dk/view_binary.php?fileId=4433

Developer: Stepper:
http://labmanager.dtu.dk/view_binary.php?fileId=4435




Hotplates

Hotplate: 90-110C

Hotplate: 90-110C located in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.


The user manual, and contact information can be found in LabManager:

Hotplate: 90-110C - requires login


SU-8 hotplates 1, 2 & 3

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have three dedicated SU-8 hotplates in C-1 and E-4.

Users can control the ramp-time, the baking temperature, and the baking time. In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 180°C.


The user manual, and contact information can be found in LabManager:

Hotplate 1 (SU8) - requires login

Hotplate 2 (SU8) - requires login

Hotplate 3 (SU8) - requires login

Small benchtop hotplates

Model: Präzitherm PZ 28-2.

Contact bake only. Maximum temperature is hotplate dependent.

Most of these hotplates have been fitted with a top-plate in order to protect the original hotplate surface. With the top-plate, the set point of the controller must be adjusted in order to achieve the correct temperature during the bake:

Actual surface temperature = 0.9 * display value


Gamma hotplates

Hotplate modules in Spin Coater: Gamma UV.

Hotplate temperatures are recipe dependent.

Information about the Süss MicroTec Gamma tools can be found in labadviser:


Ovens

Oven: 110C - 250C

Oven: 110C - 250C situated in C-1

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.

The set-point can be varied, but should always be returned to 110°C after use.


The user manual, and contact information can be found in LabManager:

Oven: 110C - 250C - requires login

Oven 250C

Oven 250C for pretreatment in Cx-1

The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven.


The user manual, and contact information can be found in LabManager:

Oven 250C - requires login