Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]'''
'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]'''


[[Category: Equipment |Furnace]]
''This page is written by DTU Nanolab  internal''
[[Category: Thermal process|Furnace]]
 
[[Category: Furnaces|D1]]
 
===<span style="color:Red">EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.</span>===
 
 
[[Category: Equipment |Thermal APOX]]
[[Category: Thermal process|APOX]]
[[Category: Furnaces|APOX]]




==Apox furnace (D1)==
==Apox furnace (D1)==
[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the A-5 room]]
[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the A-5 room/ Photo: DTU Nanolab internal]]


The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.   
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.   


This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.
This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.  


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=159 APOX Furnace (D1)]'''
'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=159 APOX Furnace (D1)]'''
 


==Process knowledge==
==Process knowledge==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page


==Overview of the performance of the Apox furnace and some process related parameters==
==Overview of the performance of the Apox furnace and some process related parameters==

Latest revision as of 08:39, 10 May 2023

Feedback to this page: click here

This page is written by DTU Nanolab internal


EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.


Apox furnace (D1)

Apox furnace (D1): positioned in the A-5 room/ Photo: DTU Nanolab internal

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.

The user manual, technical information and contact information can be found in LabManager:

APOX Furnace (D1)


Process knowledge


Overview of the performance of the Apox furnace and some process related parameters

Purpose

Oxidation and annealing

Oxidation:
  • Wet: With bubbler (water steam + O2)
Performance Film thickness
  • Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range Process Temperature
  • 1075 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 0-10 slm
  • O2: 0-10 slm
Substrates Batch size
  • 1-200 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box)
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