Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions
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'''Feedback to this page''': '''[mailto:thinfilm@ | '''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]''' | ||
''This page is written by DTU Nanolab internal'' | |||
===<span style="color:Red">EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.</span>=== | |||
[[Category: Equipment |Thermal APOX]] | |||
[[Category: Thermal process|APOX]] | |||
[[Category: Furnaces|APOX]] | |||
==Apox furnace (D1)== | ==Apox furnace (D1)== | ||
[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the | [[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the A-5 room/ Photo: DTU Nanolab internal]] | ||
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required. | The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required. | ||
This furnace is positioned in the III-V cleanroom area. Only | This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace. | ||
'''The user manual, technical information and contact information can be found in LabManager:''' | |||
'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=159 APOX Furnace (D1)]''' | |||
==Process knowledge== | ==Process knowledge== | ||
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | *Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | ||
==Overview of the performance of the Apox furnace and some process related parameters== | ==Overview of the performance of the Apox furnace and some process related parameters== | ||
Latest revision as of 08:39, 10 May 2023
Feedback to this page: click here
This page is written by DTU Nanolab internal
EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.
Apox furnace (D1)
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.
This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.
The user manual, technical information and contact information can be found in LabManager:
Process knowledge
- Oxidation: look at the Oxidation page
| Purpose |
Oxidation and annealing |
Oxidation:
|
|---|---|---|
| Performance | Film thickness |
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| Process parameter range | Process Temperature |
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| Process pressure |
| |
| Gas flows |
| |
| Substrates | Batch size |
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| Substrate material allowed |
|