Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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==Etching of nanostructures in silicon using the ICP Metal Etcher==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher click here]'''
<!--Page reviewed by jmli 9/8-2022  -->


{| border="2" cellspacing="1" cellpadding="3" align="center"
[[Category: Equipment |Etch ICP Metal]]
!
[[Category: Etch (Dry) Equipment|ICP metal]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano3|Sinano3.0]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano31|Sinano3.1]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano32|Sinano3.2]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33|Sinano3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano34|Sinano3.4]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano4|Sinano4.0]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano35|Sinano3.5]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano36|Sinano3.6]]
|-
!Cl<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|20
|15
|15
|-
!BCl<sub>3</sub> (sccm)
|5
|3
|5
|5
|5
|0
|5
|5
|-
!HBr (sccm)
|15
|17
|15
|15
|15
|0
|0
|0
|-
! Coil power (W)
|900 (Load)
|900 (Forward)
|900 (Forward)
|900 (Forward)
|900 (Forward)
|900 (Load)
|900 (Load)
|900 (Forward)
|-
!Platen power (W)
|50
|50
|60
|75
|90
|60
|60
|60
|-
! Pressure (mtorr)
|2
|2
|2
|2
|2
|2
|5
|10
|-
! Process time (s)
|150
|180
|120
|180
|120
|90
|120
|180
|-
|
! colspan="8" align="center"| Etched depths
|-
! 30 nm
|198
|231
|147
|214
|163
|227
|185
|170
|-
!60 nm
|256
|308
|181
|305
|229
|253
|191
|185
|-
!90 nm
|259
|335
|195
|342
|255
|251
|222
|253
|-
!120 nm
|277
|346
|203
|357
|262
|257
|221
|278
|-
!150 nm
|269
|341
|205
|369
|265
|262
|225
|280
|-
! Nominal line width
! colspan="8" align="center"| Etch rates in trenches
|-
!30 nm
|79
|77
|74
|71
|82
|151
|93
|57
|-
!60 nm
|102
|103
|91
|102
|115
|169
|96
|62
|-
!90 nm
|104
|112
|98
|114
|128
|167
|111
|84
|-
!120 nm
|111
|115
|102
|119
|131
|171
|111
|93
|-
!150 nm
|108
|114
|103
|123
|133
|175
|113
|93
|-
! Nominal line width
! colspan="8" align="center"| Etch rates in zep resist
|-
! zep
|18
|27
|35
|39
|54
|45
|38
|39
|-
|}


== The ICP Metal Etcher ==


[[Image:ICP-Metal-Etcher.jpg |300x300px|thumb|The SPTS ICP Metal Etcher in the DTU Nanolab cleanroom B-1]]


Name: PRO ICP <br>
Vendor: STS (now SPTS) <br>
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]].


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano1|1 - the first nanoetch]]
'''The user manual, user APV and contact information can be found in LabManager:'''


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano3|Sinano3.0]]
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=266 LabManager]


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano31|Sinano3.1]]
==Process information==


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano32|Sinano3.2]]
'''Standard recipes'''


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33|Sinano3.3]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium|Etch of aluminium]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etch of titanium]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etch of chromium]]


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano34|Sinano3.4]]
'''Other etch recipes'''
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Barc Etch|Barc Etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon|Etch of silicon]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide|Etch of silicon oxide]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride|Etch of silicon nitride]]
*[[Specific Process Knowledge/Etch/Titanium Oxide/ICP metal|Etch of Titanium Oxide]]
*[[Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> Etch]]


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano35|Sinano3.5]]
'''End point detection'''
*[[/Examples of End point detection|Examples of End point detection]]


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano36|Sinano3.6]]


==An overview of the performance of the ICP Metal Etcher and some process related parameters==


*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano4|Sinano4.0]]
{| border="2" cellspacing="0" cellpadding="2"
|-
!style="background:silver; color:black;" align="left"|Purpose
|style="background:LightGrey; color:black"|Dry etch of
|style="background:WhiteSmoke; color:black"|
* Metals such as aluminium, chromium and titanium and the related oxides and nitrides
* Metals such as molybdenum, tungsten, titanium tungsten
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Etch rates
|style="background:WhiteSmoke; color:black"|
* Aluminium : ~350 nm/min (depending on features size and etch load)
|-
|style="background:LightGrey; color:black"|Anisotropy
|style="background:WhiteSmoke; color:black"|
*Good
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*~0.1-95 mTorr
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
{|
| SF<sub>6</sub>: 0-100 sccm
| O<sub>2</sub>: 0-100 sccm
|-
| C<sub>4</sub>F<sub>8</sub>: 0-100 sccm
| Ar: 0-300 sccm
|-
| CF<sub>4</sub>: 0-100 sccm
| H<sub>2</sub>: 0-30 sccm
|-
| CH<sub>4</sub>: not working
| BCl<sub>3</sub>: 0-90 sccm
|-
| Cl<sub>2</sub>: 0-100 sccm
| HBr: 0-100 sccm
|}
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*1 6" wafer per run
*1 4" wafer per run
*1 2" wafer per run
*Or several smaller pieces on a carrier wafer
|-
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
**with layers of silicon oxide or silicon (oxy)nitride
*Quartz wafers
|-
| style="background:LightGrey; color:black"|Possible masking material
|style="background:WhiteSmoke; color:black"|
*Photoresist/e-beam resist
*PolySilicon, Silicon oxide or silicon (oxy)nitride
*Aluminium, titanium or chromium
|-
|}

Latest revision as of 10:37, 24 April 2023

Feedback to this page: click here

The ICP Metal Etcher

The SPTS ICP Metal Etcher in the DTU Nanolab cleanroom B-1

Name: PRO ICP
Vendor: STS (now SPTS)
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the IBE/IBSD Ionfab 300.

The user manual, user APV and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Standard recipes

Other etch recipes

End point detection


An overview of the performance of the ICP Metal Etcher and some process related parameters

Purpose Dry etch of
  • Metals such as aluminium, chromium and titanium and the related oxides and nitrides
  • Metals such as molybdenum, tungsten, titanium tungsten
Performance Etch rates
  • Aluminium : ~350 nm/min (depending on features size and etch load)
Anisotropy
  • Good
Process parameter range Process pressure
  • ~0.1-95 mTorr
Gas flows
SF6: 0-100 sccm O2: 0-100 sccm
C4F8: 0-100 sccm Ar: 0-300 sccm
CF4: 0-100 sccm H2: 0-30 sccm
CH4: not working BCl3: 0-90 sccm
Cl2: 0-100 sccm HBr: 0-100 sccm
Substrates Batch size
  • 1 6" wafer per run
  • 1 4" wafer per run
  • 1 2" wafer per run
  • Or several smaller pieces on a carrier wafer
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist/e-beam resist
  • PolySilicon, Silicon oxide or silicon (oxy)nitride
  • Aluminium, titanium or chromium
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