Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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==Etching of nanostructures in silicon using the ICP Metal Etcher==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher click here]'''
<!--Page reviewed by jmli 9/8-2022  -->


[[Category: Equipment |Etch ICP Metal]]
[[Category: Etch (Dry) Equipment|ICP metal]]


=== s ===
== The ICP Metal Etcher ==


Two recipes have been optimized for the ASE. Their specification is on a 10 % etch load wafer with trenches.
[[Image:ICP-Metal-Etcher.jpg |300x300px|thumb|The SPTS ICP Metal Etcher in the DTU Nanolab cleanroom B-1]]
* '''Shallolr''': The shallow etch process will etch a 2 <math>\mu</math>m opening down to make a 20 <math>\mu</math>m trench.
* '''Deepetch''': The deep etch process will etch a 50 <math>\mu</math>m opening down to make a 300 <math>\mu</math>m trench.
The standardization procedure on the ASE covers these two etches.


== Recipes on the ASE ==
Name: PRO ICP <br>
Vendor: STS (now SPTS) <br>
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]].


=== Shallolr ===
'''The user manual, user APV and contact information can be found in LabManager:'''


The shallolr recipe is designed to etch features (with sizes above 1 <math>\mu</math>m) in silicon down to a depth that ranges from a few microns to some 50 microns. (If you need to etch deeper use Deepetch or more shallow, see Nanoetches.) It is specified to etch a 2 <math>\mu</math>m wide trench down to a depth of 20 <math>\mu</math>m on a wafer that has a global/local etch opening density of 10%.
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=266 LabManager]


The recipe is given below.
==Process information==


{| border="2" cellpadding="2" cellspacing="1"  
'''Standard recipes'''
|+ '''The starting point'''
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium|Etch of aluminium]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etch of titanium]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etch of chromium]]
 
'''Other etch recipes'''
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Barc Etch|Barc Etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon|Etch of silicon]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide|Etch of silicon oxide]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride|Etch of silicon nitride]]
*[[Specific Process Knowledge/Etch/Titanium Oxide/ICP metal|Etch of Titanium Oxide]]
*[[Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> Etch]]
 
'''End point detection'''
*[[/Examples of End point detection|Examples of End point detection]]
 
 
==An overview of the performance of the ICP Metal Etcher and some process related parameters==
 
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
! rowspan="6" align="center"| Break
!style="background:silver; color:black;" align="left"|Purpose
| Gas
|style="background:LightGrey; color:black"|Dry etch of
| Cl<sub>2</sub> 20 sccm
|style="background:WhiteSmoke; color:black"|
* Metals such as aluminium, chromium and titanium and the related oxides and nitrides
* Metals such as molybdenum, tungsten, titanium tungsten
|-
|-
| Pressure
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
| 2 mTorr, Strike 3 secs @ 5 mTorr
|style="background:LightGrey; color:black"|Etch rates
|style="background:WhiteSmoke; color:black"|
* Aluminium : ~350 nm/min (depending on features size and etch load)
|-
|-
| Power
|style="background:LightGrey; color:black"|Anisotropy
| 600 W CP, 200 W PP
|style="background:WhiteSmoke; color:black"|
|-
*Good
| Temperature
| 20 degs
|-
|-
| Hardware
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
| 100 mm Spacers
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*~0.1-95 mTorr
|-
|-
| Time
|style="background:LightGrey; color:black"|Gas flows
| 15 secs
|style="background:WhiteSmoke; color:black"|
{|
| SF<sub>6</sub>: 0-100 sccm
| O<sub>2</sub>: 0-100 sccm
|-
|-
! rowspan="6" align="center"| Main
| C<sub>4</sub>F<sub>8</sub>: 0-100 sccm
| Gas
| Ar: 0-300 sccm
| Cl<sub>2</sub> 20 sccm
|-
|-
| Pressure
| CF<sub>4</sub>: 0-100 sccm
| 2 mTorr, Strike 3 secs @ 5 mTorr
| H<sub>2</sub>: 0-30 sccm
|-
|-
| Power
| CH<sub>4</sub>: not working
| 600 W CP, 200 W PP
| BCl<sub>3</sub>: 0-90 sccm
|-  
| Temperature
| 20 degs
|-
|-
| Hardware
| Cl<sub>2</sub>: 0-100 sccm
| 100 mm Spacers
| HBr: 0-100 sccm
|}
|-
|-
| Time
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
| 15 secs
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*1 6" wafer per run
*1 4" wafer per run
*1 2" wafer per run
*Or several smaller pieces on a carrier wafer
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
**with layers of silicon oxide or silicon (oxy)nitride
*Quartz wafers
|-
| style="background:LightGrey; color:black"|Possible masking material
|style="background:WhiteSmoke; color:black"|
*Photoresist/e-beam resist
*PolySilicon, Silicon oxide or silicon (oxy)nitride
*Aluminium, titanium or chromium
|-
|}
|}
The process runs for 31 cycles (5:56 mins). The fact that it's Bosch process is clear from the scallops on the sidewalls - one should be able to count 31 of them.
<gallery caption="Standardization images of the shallolr recipe" widths="300px" heights="300px" perrow="2">
Image:jmlshal070921 pos1 2mu_09.jpg|The profile of a 2 <math>\mu</math>m trench
image:jmlshal070921 pos1 50mu_08.jpg|The profile of a 50 <math>\mu</math>m trench
</gallery>

Latest revision as of 10:37, 24 April 2023

Feedback to this page: click here

The ICP Metal Etcher

The SPTS ICP Metal Etcher in the DTU Nanolab cleanroom B-1

Name: PRO ICP
Vendor: STS (now SPTS)
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the IBE/IBSD Ionfab 300.

The user manual, user APV and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Standard recipes

Other etch recipes

End point detection


An overview of the performance of the ICP Metal Etcher and some process related parameters

Purpose Dry etch of
  • Metals such as aluminium, chromium and titanium and the related oxides and nitrides
  • Metals such as molybdenum, tungsten, titanium tungsten
Performance Etch rates
  • Aluminium : ~350 nm/min (depending on features size and etch load)
Anisotropy
  • Good
Process parameter range Process pressure
  • ~0.1-95 mTorr
Gas flows
SF6: 0-100 sccm O2: 0-100 sccm
C4F8: 0-100 sccm Ar: 0-300 sccm
CF4: 0-100 sccm H2: 0-30 sccm
CH4: not working BCl3: 0-90 sccm
Cl2: 0-100 sccm HBr: 0-100 sccm
Substrates Batch size
  • 1 6" wafer per run
  • 1 4" wafer per run
  • 1 2" wafer per run
  • Or several smaller pieces on a carrier wafer
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist/e-beam resist
  • PolySilicon, Silicon oxide or silicon (oxy)nitride
  • Aluminium, titanium or chromium
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