Specific Process Knowledge/Thermal Process/D4 III-V Oven: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Processes/D4_III_V_Oven click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/D4_III-V_Oven click here]'''
 
''This page is written by DTU Nanolab  internal''
===<span style="color:Red">EXPIRED. The D4 III-V Oven has been removed from the cleanroom August 2019. At the moment there is not replacement for it.</span>===
 
 
[[Category: Equipment |Thermal III-V ]]
[[Category: Thermal process|III-V]]
[[Category: Furnaces|III-V]]


==III-V Oven (D4)==
==III-V Oven (D4)==
[[Image:IIIV_Oven.jpg|thumb|450x450px|III-V Oven (D4). Positioned in cleanroom area F-3.]]
[[Image:IIIV_Oven.jpg|thumb|450x450px|III-V Oven (D4). Positioned in cleanroom area F-3/ Photo: DTU Nanolab internal.]]


The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  
The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  


The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.  
The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.


Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.  
Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.  
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''


==Process knowledge==
==Process knowledge==
*[[Specific_Process_Knowledge/III-V_Process/III_V_thermal_processes/III_V_Oven/|Standard wet oxidation recipe on the III-V furnace]]
*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_furnace_(D4)|Standard wet oxidation recipe on the III-V furnace]]





Latest revision as of 14:00, 17 April 2023

Feedback to this page: click here

This page is written by DTU Nanolab internal

EXPIRED. The D4 III-V Oven has been removed from the cleanroom August 2019. At the moment there is not replacement for it.

III-V Oven (D4)

III-V Oven (D4). Positioned in cleanroom area F-3/ Photo: DTU Nanolab internal.

The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Process knowledge


Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon