Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
No edit summary
 
(16 intermediate revisions by 4 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP click here]'''
''This page is written by DTU Nanolab internal''
==<span style="color:Red">EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.</span>==
[[Category: Equipment |Thermal Jipelec]]
[[Category: Thermal process|Jipelec]]
==Jipelec - Rapid Thermal Processing==
==Jipelec - Rapid Thermal Processing==


[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom 1]]
[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal]]


The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).
The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).


'''The user manual(s), technical information and contact information can be found in LabManager:'''
 
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=164 Jipelec RTP]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=164 Jipelec RTP]'''
Line 19: Line 29:
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*0-1000 <sup>o</sup>C
*0-1100 <sup>o</sup>C (only short time a the high temperatures - see the user manual)
*Temperature ramp up to 300 <sup>o</sup>C/min
*III-V materials only to 450 <sup>o</sup>C
*Temperature ramp up to 50 <sup>o</sup>C/min
 
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm
*vacuum
*Vacuum
|-
|-
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gases on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|


Line 35: Line 47:
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 4" wafer (or 2" wafers) per run
*One 50 mm or 100 mm wafer  
*Small samples
*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|


A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials)
A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
*Silicon  
*Silicon  
*Silicon oxides
*Silicon oxide
*Silicon nitrides
*Silicon nitride
*Quartz
*Fused silica/quartz
*Polysilicon
*Polysilicon
*Titan
*III-V materials (on graphite carrier, max 450 <sup>o</sup>C)
*III-V materials (on graphite carrier)
*Some metals - (on graphite carrier). Ask the Thin Film group for permission
*Silicon wafers (new from the box or RCA cleaned)
*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
|-  
|-  
|}
|}

Latest revision as of 13:58, 17 April 2023

Feedback to this page: click here

This page is written by DTU Nanolab internal

EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.

Jipelec - Rapid Thermal Processing

Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).


The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose RTP annealing
Process parameter range Process Temperature
  • 0-1100 oC (only short time a the high temperatures - see the user manual)
  • III-V materials only to 450 oC
  • Temperature ramp up to 50 oC/min
Process pressure
  • 1 atm
  • Vacuum
Gases on the system
  • N2
Substrates Batch size
  • One 50 mm or 100 mm wafer
  • Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
Substrate materials allowed

A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used

  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Fused silica/quartz
  • Polysilicon
  • III-V materials (on graphite carrier, max 450 oC)
  • Some metals - (on graphite carrier). Ask the Thin Film group for permission
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP&oldid=45600"